RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

2--500 MHz, 600 W, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications. • Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 125 Wa

RF Power Field Effect Transistor

880 MHz, 10 W AVG., 28 V SINGLE N-CDMA LATERAL N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common-source amplifier applica

RF Power LDMOS Transistors

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RF Power LDMOS Transistors Enhancement--Mode Lateral MOSFETs

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RF LDMOS Wideband Integrated Power Amplifiers

RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET

RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET

RF Power LDMOS Transistors

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