RF Power Field Effect Transistor

880 MHz, 10 W AVG., 28 V SINGLE N-CDMA LATERAL N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common-source amplifier applica

N--Channel Enhancement--Mode Lateral MOSFETs

RF Power LDMOS Transistor

RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs

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RF Power LDMOS Transistor

RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET

POW-R-PAK 100A / 1200V H-Bridge IGBT Assembly

Description: The Powerex POW-R-PAKTM is a configurable IGBT based power assembly that may be used as a converter, chopper, half or full bridge, or three phase inverter for motor control, power supply, UPS or other power conversion applications. The power assembly is mounted on a forced air c

NPT & Rugged Type 1200V IGBT Module

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NPT & Rugged Type 1200V IGBT Module

文件：1.07781 Mbytes Page：7 Pages

NPT & Rugged Type 1200V IGBT Module

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H-Bridge POW-R-PAK IGBT Assembly 100 Amperes/1200 Volts

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