Porcelain Superchip Multilayer Capacitors

文件：299.53 Kbytes Page：6 Pages

RF Power LDMOS Transistor

RF Power LDMOS Transistors

RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

RF Power Field Effect Transistors

RF Power LDMOS Transistors

RF Power LDMOS Transistors

N--Channel Enhancement--Mode Lateral MOSFET

RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET

RF Power LDMOS Transistors

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

RF LDMOS Wideband Integrated Power Amplifiers

RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2240N wideband integrated circuit is designed with on-chip matching that makes it usable from 2000 to 2200 MHz. This multi-stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats in

RF Power LDMOS Transistor

RF Power LDMOS Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

RF Power Field Effect Transistors

1805–2200 MHz, 107 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR

RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

2--500 MHz, 600 W, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications. • Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 125 Wa

RF Power Field Effect Transistors

RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

2--500 MHz, 600 W, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications. • Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 125 Wa

1800–2200 MHz, 32 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR

RF Power Field Effect Transistors

RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed primarily for CW large- signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

N-Channel Enhancement-Mode Lateral MOSFET

N--Channel Enhancement--Mode Lateral MOSFETs

RF Power LDMOS Transistor

RF Power Field Effect Transistor

880 MHz, 10 W AVG., 28 V SINGLE N-CDMA LATERAL N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common-source amplifier applica

RF Power Field Effect Transistor

880 MHz, 10 W AVG., 28 V SINGLE N-CDMA LATERAL N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common-source amplifier applica

RF Power Field Effect Transistor

880 MHz, 10 W AVG., 28 V SINGLE N-CDMA LATERAL N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common-source amplifier applica

N--Channel Enhancement--Mode Lateral MOSFETs

RF Power Field Effect Transistors

RF Power Field Effect Transistors

RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET

RF Power LDMOS Transistors

RF Power LDMOS Transistor

RF Power LDMOS Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

RF Power LDMOS Transistor

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFETs

RF Power LDMOS Transistor

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFETs

RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET

N-Channel Enhancement-Mode Lateral MOSFET

RF Power Field Effect Transistors

RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed primarily for CW large- signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

RF Power LDMOS Transistor

RF Power LDMOS Transistors

RF Power LDMOS Transistor

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

N-Channel Enhancement-Mode Lateral MOSFET

RF Power Field Effect Transistors

RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed primarily for CW large- signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

N--Channel Enhancement--Mode Lateral MOSFETs

1805–2200 MHz, 107 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR

RF Power Field Effect Transistor

865--960 MHz, 28 W AVG., 28 V SINGLE W--CDMA LATERAL N--CHANNEL RF POWER MOSFET Designed for CDMA base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single--Carrier W--CDMA Perfor