RF Power Field Effect Transistors

RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed primarily for CW large- signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

2--500 MHz, 600 W, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications. • Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 125 Wa

1800–2200 MHz, 32 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR

RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET

RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

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RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

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RF Power Field Effect Transistor

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RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs

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RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

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RF Power LDMOS Transistors