位置：首页 > IC中文资料 > AT49LV080T
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
AT49LV080T | 8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | Atmel 爱特梅尔 |   | |
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | Atmel 爱特梅尔 | | ||
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | Atmel 爱特梅尔 | | ||
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | Atmel 爱特梅尔 | | ||
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | Atmel 爱特梅尔 | | ||
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | Atmel 爱特梅尔 | | ||
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | Atmel 爱特梅尔 | | ||
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | Atmel 爱特梅尔 | | ||
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | Atmel 爱特梅尔 | | ||
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | Atmel 爱特梅尔 | | ||
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | Atmel 爱特梅尔 | | ||
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | Atmel 爱特梅尔 | | ||
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | Atmel 爱特梅尔 | | ||
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | Atmel 爱特梅尔 | | ||
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | Atmel 爱特梅尔 | | ||
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | Atmel 爱特梅尔 | | ||
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | Atmel 爱特梅尔 | | ||
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | Atmel 爱特梅尔 | | ||
8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over th | Atmel 爱特梅尔 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ATMEL |
22+ |
TSOP40 |
20000 |
公司只做原装 品质保证 |
|||
ATMEL |
23+ |
SSOP-40 |
65600 |
||||
Atmel |
23+ |
40-VSOP |
9000 |
专业分销产品!原装正品!价格优势! |
|||
ATMEL |
NEW |
原厂封装 |
9526 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
ATMEL |
25+ |
TSOP40 |
30000 |
代理全新原装现货,价格优势 |
|||
ATMEL |
20+ |
TSSOP40 |
35830 |
原装优势主营型号-可开原型号增税票 |
|||
ATMEL |
2015+ |
TSOP |
19889 |
一级代理原装现货,特价热卖! |
|||
ATMEL/爱特梅尔 |
22+ |
TSOP |
12245 |
现货,原厂原装假一罚十! |
|||
ATMEL |
25+ |
DIP |
18000 |
原厂直接发货进口原装 |
|||
ATMEL/爱特梅尔 |
23+ |
TSSOP40 |
15000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
AT49LV080T芯片相关品牌
AT49LV080T规格书下载地址
AT49LV080T参数引脚图相关
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2019-3-7
DdatasheetPDF页码索引
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