位置:首页 > IC中文资料第2111页 > AT49LV040
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
AT49LV040 | 4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | ||
AT49LV040 | 4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | ||
AT49LV040 | 4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory | Microchip 微芯科技 | ||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh | Atmel 爱特梅尔 | |||
封装/外壳:32-LCC(J 形引线) 包装:管件 描述:IC FLASH 4MBIT PARALLEL 32PLCC 集成电路(IC) 存储器 | Microchip 微芯科技 | |||
封装/外壳:32-TFSOP(0.724",18.40mm 宽) 包装:管件 描述:IC FLASH 4MBIT PARALLEL 32TSOP 集成电路(IC) 存储器 | Microchip 微芯科技 |
AT49LV040产品属性
- 类型
描述
- 型号
AT49LV040
- 功能描述
闪存 4M bit
- RoHS
否
- 制造商
ON Semiconductor
- 数据总线宽度
1 bit
- 存储类型
Flash
- 存储容量
2 MB
- 结构
256 K x 8
- 接口类型
SPI
- 电源电压-最大
3.6 V
- 电源电压-最小
2.3 V
- 最大工作电流
15 mA
- 工作温度
- 40 C to + 85 C
- 安装风格
SMD/SMT
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ATMEL |
2016+ |
PLCC32 |
1000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ATMEL |
23+ |
NA |
20000 |
全新原装假一赔十 |
|||
ATMEL |
24+ |
8000 |
原装现货,特价销售 |
||||
Atmel |
23+ |
32-VSOP(8x14) |
36430 |
专业分销产品!原装正品!价格优势! |
|||
ATMEL |
NEW |
PLCC32 |
9526 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
ATMEL |
25+ |
TSOP-32 |
5 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
ATMEL |
TSOP28 |
6679 |
全新原装进口自己库存优势 |
||||
Microchip Technology |
21+ |
32-LCC(J 形引线) |
96 |
100%进口原装!长期供应!绝对优势价格(诚信经营 |
|||
ATM |
25+ |
24 |
公司优势库存 热卖中!!! |
||||
MICROCHIP/微芯 |
25+ |
SOP |
32360 |
MICROCHIP/微芯全新特价AT49LV040-90IC即刻询购立享优惠#长期有货 |
AT49LV040芯片相关品牌
AT49LV040规格书下载地址
AT49LV040参数引脚图相关
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- AT49LV002T-90JC SL561
- AT49LV002T-90JC
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- AT485
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- AT468
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2019-3-7
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