256K 32K x 8 Paged CMOS E2PROM

Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus

256K 32K x 8 Paged CMOS E2PROM

Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus

5 Volt, Byte Alterable E2PROM

DESCRIPTION The X28C256 is an 32K x 8 E2PROM, fabricated with Xicor’s proprietary, high performance, floating gate CMOS technology. Like all Xicor programmable non volatile memories the X28C256 is a 5V only device. The X28C256 features the JEDEC approved pinout for byte wide memories, compat

32K-Bit Parallel E2PROM

DESCRIPTION The CAT28C256 is a fast, low power, 5V-only CMOS parallel E2PROM organized as 32K x 8-bits. It requires a simple interface for in-system programming. On-chip address and data latches, self-timed write cycle with auto clear and VCC power up/down write protection eliminate addition

256K 32K x 8 Paged CMOS E2PROM

Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus

256K EEPROM (32K x 8-Bit) EEPROM

DESCRIPTION: Maxwell Technologies’ 28C256T high density 256k-bit EEPROM microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. The 28C256T is capable of in-system electrical byte and page programmability. It has a 64-Byte page programming function