AT28C256价格
参考价格：￥39.8440
型号：AT28C256-15JU 品牌：Atmel 备注：这里有AT28C256多少钱，2026年最近7天走势，今日出价，今日竞价，AT28C256批发/采购报价，AT28C256行情走势销售排行榜，AT28C256报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
AT28C256 | 256K 32K x 8 Paged CMOS E2PROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 |   | |
AT28C256 | 256K (32K x 8) Paged Parallel EEPROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | |
AT28C256 | 5V 256Kbit (32Kbit x 8) Parallel EEPROM with Software Data Protection The Microchip AT28C256 is a high-performance256Kbit Parallel EEPROM available in both Industrial and Military temp ranges, offeringaccess times to 150ns with power dissipation of 440mW. Deselected, CMOS standbycurrent is less than 200μA. Accessedlike static RAM for the read or write cycle without e 32 Kbits x 8 (256 Kbit)\n5V ± 10% Supply\nParallel Interface\nAT28C256E - High Endurance 100K Write Cycles Option\nAT28C256F - 3 ms Fast Write Option\n150ns access time\nSelf-Timed Erase and Write Cycles (10 ms max)\nPage Write and Byte Write\nData Polling for end of write detection\nAvailable i; | MICROCHIP 微芯科技 | | |
256K (32K x 8) Paged Parallel EEPROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K 32K x 8 Paged CMOS E2PROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K 32K x 8 Paged CMOS E2PROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K (32K x 8) Paged Parallel EEPROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K 32K x 8 Paged CMOS E2PROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K (32K x 8) Paged Parallel EEPROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K (32K x 8) Paged Parallel EEPROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K 32K x 8 Paged CMOS E2PROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K 32K x 8 Paged CMOS E2PROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K (32K x 8) Paged Parallel EEPROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K 32K x 8 Paged CMOS E2PROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K 32K x 8 Paged CMOS E2PROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K 32K x 8 Paged CMOS E2PROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K (32K x 8) Paged Parallel EEPROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K 32K x 8 Paged CMOS E2PROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K (32K x 8) Paged Parallel EEPROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K 32K x 8 Paged CMOS E2PROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K 32K x 8 Paged CMOS E2PROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K (32K x 8) Paged Parallel EEPROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K 32K x 8 Paged CMOS E2PROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K 32K x 8 Paged CMOS E2PROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K 32K x 8 Paged CMOS E2PROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K 32K x 8 Paged CMOS E2PROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K (32K x 8) Paged Parallel EEPROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K 32K x 8 Paged CMOS E2PROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K 32K x 8 Paged CMOS E2PROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K (32K x 8) Paged Parallel EEPROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K 32K x 8 Paged CMOS E2PROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K 32K x 8 Paged CMOS E2PROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K (32K x 8) Paged Parallel EEPROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K 32K x 8 Paged CMOS E2PROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K (32K x 8) Paged Parallel EEPROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K 32K x 8 Paged CMOS E2PROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K (32K x 8) Paged Parallel EEPROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K (32K x 8) Paged Parallel EEPROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K 32K x 8 Paged CMOS E2PROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K 32K x 8 Paged CMOS E2PROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K 32K x 8 Paged CMOS E2PROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K (32K x 8) Paged Parallel EEPROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K 32K x 8 Paged CMOS E2PROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K (32K x 8) Paged Parallel EEPROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K 32K x 8 Paged CMOS E2PROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K 32K x 8 Paged CMOS E2PROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K 32K x 8 Paged CMOS E2PROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K 32K x 8 Paged CMOS E2PROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K 32K x 8 Paged CMOS E2PROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K 32K x 8 Paged CMOS E2PROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K 32K x 8 Paged CMOS E2PROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K 32K x 8 Paged CMOS E2PROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K (32K x 8) Paged Parallel EEPROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K (32K x 8) Paged Parallel EEPROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K 32K x 8 Paged CMOS E2PROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K 32K x 8 Paged CMOS E2PROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K 32K x 8 Paged CMOS E2PROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K (32K x 8) Paged Parallel EEPROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K (32K x 8) Paged Parallel EEPROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | | ||
256K 32K x 8 Paged CMOS E2PROM Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus | ATMEL 爱特梅尔 | |
AT28C256产品属性
- 类型
描述
- Density (Organization)：
256Kb
- Organization：
32K x 8
- Operating Voltage Range (Vcc)：
4.5 to 4.5
- Temperature Range：
-40°C to +85°C
- Endurance：
10k Cycles
- Data Retention (Years)：
10
- Packages：
28\\CERDIP28\\CPGA28\\FLATPACK28\\PDIP28\\SOIC28\\TSOP32\\CLCC32\\PLCC
- Description：
Parallel EEPROM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Microchip(微芯) |
24+ |
标准封装 |
7798 |
原厂渠道供应,大量现货,原型号开票。 |
|||
ATMEL |
2016+ |
PLCC32 |
4000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
MICROCHIP/微芯 |
25+ |
原装 |
32000 |
MICROCHIP/微芯全新特价AT28C256-15DM/883即刻询购立享优惠#长期有货 |
|||
ATMEL |
24+ |
SMD |
600 |
“芯达集团”专营军工百分之百原装进口 |
|||
ATMEL |
2430+ |
28-TSOP |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
AT |
2025+ |
DIP |
3168 |
全新原装、公司现货热卖 |
|||
ATMEL/爱特梅尔 |
24+ |
CDIP28 |
532 |
原装优势现货 |
|||
ATMEL |
26+ |
DIP28 |
20000 |
原装正品支持实单 |
|||
38 |
DIP28 |
20 |
92 |
||||
Microchip |
24+ |
28-DIP |
30000 |
原厂原装,价格优势,欢迎洽谈! |
AT28C256芯片相关品牌
AT28C256规格书下载地址
AT28C256参数引脚图相关
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- AT-283-PIN
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- AT-280
- AT-28.63636MAGE-T
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制造商: Microchip 产品种类: 电可擦除可编程只读存储器 安装风格: SMD/SMT 封装 / 箱体: LCC-32 存储容量: 256 kbit 组织: 32 k x 8 接口类型: Serial， 4-Wire， SDI， SPI 访问时间: 150 ns 数据保留: 10 Year 电源电流—最大值: 50 mA 电源电压-最小: 4.5 V 电源电压-最大: 5.5 V 最小工作温度
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制造商: Microchip 产品种类: 电可擦除可编程只读存储器 发货限制： Mouser 目前在您所在地区不销售该产品。 RoHS: 详细信息 安装风格: SMD/SMT 封装 / 箱体: LCC-32 存储容量: 256 kbit 组织: 32 k x 8 接口类型: Serial， 4-Wire， SDI， SPI 访问时间: 150 ns 数据保留: 10 Year 电源电流—
2019-11-29AT28C010-12DM/883电可擦除可编程只读存储器
制造商: Microchip 产品种类: 电可擦除可编程只读存储器 发货限制： Mouser 目前在您所在地区不销售该产品。 RoHS: N 安装风格: Through Hole 封装 / 箱体: Cerdip-32 存储容量: 1 Mbit 组织: 128 k x 8 接口类型: Parallel 访问时间: 120 ns 数据保留: 10 Year 最大时钟频率: 5 MHz 电源电流
2019-11-29
DdatasheetPDF页码索引
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