| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
TrenchMVPowerMOSFETHiperFET TrenchMV™PowerMOSFETHiperFET™ N-ChannelEnhancementMode AvalancheRated Fastintrisicdiode Features •Ultra-lowOnResistance •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect •175°COperatingTemperature •Fastintrinsicdiode | IXYS IXYS Integrated Circuits Division |  |   | |
TrenchMVPowerMOSFETHiperFET TrenchMV™PowerMOSFETHiperFET™ N-ChannelEnhancementMode AvalancheRated Fastintrisicdiode Features •Ultra-lowOnResistance •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect •175°COperatingTemperature •Fastintrinsicdiode | IXYS IXYS Integrated Circuits Division | | | |
StandardSizeToggleSwitch 文件：2.77001 Mbytes Page：14 Pages | COPALCopal Electronics NidecNidec元器件公司 |  | | |
iscN-ChannelMOSFETTransistor 文件：299.61 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
iscN-ChannelMOSFETTransistor 文件：295.44 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS-艾赛斯 |
24+25+/26+27+ |
TO-220-3 |
6328 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
Littelfuse/IXYS |
23+ |
TO-220 |
7828 |
支持大陆交货,美金交易。原装现货库存。 |
|||
ixys |
24+ |
TO-220 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
IXYS |
23+ |
SMD |
67000 |
原装正品实单可谈 库存现货 |
|||
IR |
23+ |
TO-TO-220 |
12300 |
全新原装真实库存含13点增值税票! |
|||
IXYS/艾赛斯 |
2022+ |
TO-220 |
30000 |
进口原装现货供应,原装 假一罚十 |
|||
I |
23+ |
TO-220 |
10000 |
公司只做原装正品 |
|||
IXYS |
24+ |
TO-220-3 |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
IXYS |
2019+ |
TO-220-3 |
65500 |
原装正品货到付款,价格优势! |
|||
IXYS |
23+ |
TO-220-3 |
64232 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
AT130N10S芯片相关品牌
AT130N10S规格书下载地址
AT130N10S参数引脚图相关
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AT130N10S数据表相关新闻
AT-1224-TWT-5V-2-R
优势库存
2022-11-28AT17F040-30JU
AT17F040-30JU
2022-10-12AT17C256-10PC
AT17C256-10PC
2022-8-9ASTMTXK-32.768KHZ-LG-T
ASTMTXK-32.768KHZ-LG-T
2021-7-5AT1203-33X-GRE
https://hch01.114ic.com/
2020-11-13AT1368-1-通道同步降压PWM控制器与电源良好复位
特点•高效率（最小90％，在IO=300毫安〜600毫安）•使用外部P和N沟道MOSFET•支持和向上/向下的Zeta转换•最大负载100％•振荡频率300kHz或600kHz的•软启动一个外部的能力•输出电压精度±2％•内置，在ON/OFF功能•内置短路保护•待机电流最大。10μA•静态电流
2012-12-4
DdatasheetPDF页码索引
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