Stripline Mounting Fixed Attenuators (DC to 8 GHz)

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包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF ATTENUATOR 4DB 50OHM RF/IF，射频/中频和 RFID 衰减器

RF衰减器

N-channel dual gate MOS-FETs

DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143B and SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES

N-channel dual gate MOS-FETs

DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143B and SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES

CATV amplifier module

DESCRIPTION Hybrid amplifier module in a SOT115J package operating with a supply voltage of 24 V. FEATURES • Excellent linearity • Extremely low noise • Excellent return loss properties • Silicon nitride passivation • Rugged construction • Gold metallization ensures excellent reliability

1:6 PCI CLOCK GENERATOR/ FANOUT BUFFER

The MPC903, MPC904 and MPC905 are six output clock generation devices targeted to provide the clocks required in a 3.3V or 5.0V PCI environment. The device operates from a 3.3V supply and can interface to either a TTL input or an external crystal. The inputs to the device can be driven with 5.0V w

Integrated Circuit General Purpose Transistor Array (Two Isolated Transistors and a Darlington Connected Transistor Pair)

Description: The NTE904 consists of four general purpose silicon NPN transistors on a common monolithic substrate in a 12–Lead TO5 type metal can. Two of the four transistors are connected in the Darlington configuration. The substrate is connected to a separate terminal for maximum flexibility.