包装：散装 描述：SPEAKER 32OHM 100MW 81DB 音频设备， 产品 扬声器

扬声器/喇叭

Up to 6 GHz Medium Power Up to 6 GHz Medium Power

Description Hewlett-Packard’s AT-42000 is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a me

Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip

Description Avago’s AT-42000 is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter fnger interdigitated geometry yields a medium sized tr

Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip

Description Avago’s AT-42000 is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter fnger interdigitated geometry yields a medium sized tr

Up to 6 GHz Medium Power Up to 6 GHz Medium Power

Description Hewlett-Packard’s AT-42000 is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a me

Up to 6 GHz Medium Power Silicon Bipolar Transistor

Description\nAvago’s AT-42010 is a general purpose NPN bipolar tran sistor that offers excellent high frequency performance. The AT-42010 is housed in a hermetic, high reliability 100 mil ceramic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functi • High Output Power:\n   21.0 dBm Typical P1 dB at 2.0 GHz\n   20.5 dBm Typical P1 dB at 4.0 GHz\n• High Gain at 1 dB Compression:\n   14.0 dB Typical G1 dB at 2.0 GHz\n   9.5 dB Typical G1 dB at 4.0 GHz\n• Low Noise Figure:\n   1.9 dB Typical NFO at 2.0 GHz\n• High Gain-Bandwidth Product: 8.0 GHz T;

Up to 6 GHz Medium Power Silicon Bipolar Transistor

Description Hewlett-Packard’s AT-42010 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42010 is housed in a hermetic, high reliability 100 mil ceramic package. The 4 micron emitter-to emitter pitch enables this transistor to be used in many d

Up to 6 GHz Medium Power Silicon Bipolar Transistor

Description Avago’s AT-42010 is a general purpose NPN bipolar tran sistor that offers excellent high frequency performance. The AT-42010 is housed in a hermetic, high reliability 100 mil ceramic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different fu

Up to 6 GHz Medium Power Silicon Bipolar Transistor

Description Avago Technologies AT-42035 is a general purpose NPN bipolar transistor that offers excellent highfrequency performance. The AT-42035 is housed in a cost effective surface mount 100 mil micro-X package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many d

Up to 6 GHz Medium Power Silicon Bipolar Transistor

Description Hewlett-Packard’s AT-42035 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42035 is housed in a cost effective surface mount 100 mil micro-X package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many

Up to 6 GHz Medium Power Silicon Bipolar Transistor

Description Avago Technologies AT-42035 is a general purpose NPN bipolar transistor that offers excellent highfrequency performance. The AT-42035 is housed in a cost effective surface mount 100 mil micro-X package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many d

Up to 6 GHz Medium Power Silicon Bipolar Transistor

Description Avago’s AT-42036 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42036 is housed in a cost effective surface mount 100 mil micro-X package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different f

Agilent AT-42036 Up to 6 GHz Medium Power Silicon Bipolar Transistor

Description Agilent’s AT-42036 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42036 is housed in a cost effective surface mount 100 mil micro-X package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different

Agilent AT-42036 Up to 6 GHz Medium Power Silicon Bipolar Transistor

Description Agilent’s AT-42036 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42036 is housed in a cost effective surface mount 100 mil micro-X package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different

Up to 6 GHz Medium Power Silicon Bipolar Transistor

Description Avago’s AT-42036 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42036 is housed in a cost effective surface mount 100 mil micro-X package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different f

Agilent AT-42036 Up to 6 GHz Medium Power Silicon Bipolar Transistor

Description Agilent’s AT-42036 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42036 is housed in a cost effective surface mount 100 mil micro-X package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different

Up to 6 GHz Medium Power Silicon Bipolar Transistor

Description Avago’s AT-42036 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42036 is housed in a cost effective surface mount 100 mil micro-X package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different f

Up to 6 GHz Medium Power Silicon Bipolar Transistor

Description Avago’s AT-42070 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42070 is housed in a hermetic, high reliability gold ceramic 70 mil microstrip package. The 4 micron emitter to-emitter pitch enables this transistor to be used in ma

Up to 6 GHz Medium Power Silicon Bipolar Transistor

Description Hewlett-Packard’s AT-42070 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42070 is housed in a hermetic, high reliability gold-ceramic 70 mil microstrip package. The 4 micron emitter-to-emitter pitch enables this transistor to be

Up to 6 GHz Medium Power Up to 6 GHz Medium Power

Description Hewlett-Packard’s AT-42085 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42085 is housed in a low cost .085 diameter plastic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different fun

Up to 6 GHz Medium Power Silicon Bipolar Transistor

Description Avago’s AT-42085 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42085 is housed in a low cost .085 diameter plastic package.The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 2

Up to 6 GHz Medium Power Silicon Bipolar Transistor

Description Avago’s AT-42085 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42085 is housed in a low cost .085 diameter plastic package.The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 2

Up to 6 GHz Medium Power Silicon Bipolar Transistor

Description Avago’s AT-42086 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42086 is housed in a low cost surface mount .085 diameter plastic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different f

Up to 6 GHz Medium Power Silicon Bipolar Transistor

Description Agilent’s AT-42086 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42086 is housed in a low cost surface mount .085 diameter plastic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many differe

Up to 6 GHz Medium Power Silicon Bipolar Transistor

Description Agilent’s AT-42086 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42086 is housed in a low cost surface mount .085 diameter plastic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many differe

Up to 6 GHz Medium Power Silicon Bipolar Transistor

Description Avago’s AT-42086 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42086 is housed in a low cost surface mount .085 diameter plastic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different f

Up to 6 GHz Medium Power Silicon Bipolar Transistor

Description Agilent’s AT-42086 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42086 is housed in a low cost surface mount .085 diameter plastic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many differe

Up to 6 GHz Medium Power Silicon Bipolar Transistor

Description Avago’s AT-42086 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42086 is housed in a low cost surface mount .085 diameter plastic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different f

Up to 6 GHz Medium Power Silicon Bipolar Transistor

Description Avago’s AT-42086 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42086 is housed in a low cost surface mount .085 diameter plastic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different f

Fixed Attenuators (N,BNC,TNC)

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50 ohms wide varieties standard connectors

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Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip

封装/外壳：模具 包装：卷带（TR） 描述：RF TRANS NPN 12V 9GHZ CHIP 分立半导体产品 晶体管 - 双极（BJT）- 射频

ALL DIMENSIONS ARE IN MILLIMETERS

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REVISED TO INVENTOR 3-D DRAWING TEMPLATE

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REVISED TO INVENTOR 3-D DRAWING TEMPLATE

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ALL DIMENSIONS ARE IN MILLIMETERS

文件：189.98 Kbytes Page：1 Pages