Fixed Attenuators (N,BNC,TNC)

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Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip

Description Avago’s AT-42000 is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter fnger interdigitated geometry yields a medium sized tr

Up to 6 GHz Medium Power Up to 6 GHz Medium Power

Description Hewlett-Packard’s AT-42000 is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a me

Up to 6 GHz Medium Power Up to 6 GHz Medium Power

Description Hewlett-Packard’s AT-42000 is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a me

Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip

Description Avago’s AT-42000 is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter fnger interdigitated geometry yields a medium sized tr

Up to 6 GHz Medium Power Silicon Bipolar Transistor

Description Avago’s AT-42010 is a general purpose NPN bipolar tran sistor that offers excellent high frequency performance. The AT-42010 is housed in a hermetic, high reliability 100 mil ceramic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different fu

Up to 6 GHz Medium Power Silicon Bipolar Transistor

Description Hewlett-Packard’s AT-42010 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42010 is housed in a hermetic, high reliability 100 mil ceramic package. The 4 micron emitter-to emitter pitch enables this transistor to be used in many d

Up to 6 GHz Medium Power Silicon Bipolar Transistor

Description Hewlett-Packard’s AT-42035 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42035 is housed in a cost effective surface mount 100 mil micro-X package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many

Up to 6 GHz Medium Power Silicon Bipolar Transistor

Description Avago Technologies AT-42035 is a general purpose NPN bipolar transistor that offers excellent highfrequency performance. The AT-42035 is housed in a cost effective surface mount 100 mil micro-X package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many d

Up to 6 GHz Medium Power Silicon Bipolar Transistor

Description Avago Technologies AT-42035 is a general purpose NPN bipolar transistor that offers excellent highfrequency performance. The AT-42035 is housed in a cost effective surface mount 100 mil micro-X package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many d

Agilent AT-42036 Up to 6 GHz Medium Power Silicon Bipolar Transistor

Description Agilent’s AT-42036 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42036 is housed in a cost effective surface mount 100 mil micro-X package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different

Up to 6 GHz Medium Power Silicon Bipolar Transistor

Description Avago’s AT-42036 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42036 is housed in a cost effective surface mount 100 mil micro-X package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different f

Agilent AT-42036 Up to 6 GHz Medium Power Silicon Bipolar Transistor

Description Agilent’s AT-42036 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42036 is housed in a cost effective surface mount 100 mil micro-X package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different

Up to 6 GHz Medium Power Silicon Bipolar Transistor

Description Avago’s AT-42036 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42036 is housed in a cost effective surface mount 100 mil micro-X package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different f

Agilent AT-42036 Up to 6 GHz Medium Power Silicon Bipolar Transistor

Description Agilent’s AT-42036 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42036 is housed in a cost effective surface mount 100 mil micro-X package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different

Up to 6 GHz Medium Power Silicon Bipolar Transistor

Description Avago’s AT-42036 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42036 is housed in a cost effective surface mount 100 mil micro-X package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different f

Up to 6 GHz Medium Power Silicon Bipolar Transistor

Description Avago’s AT-42070 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42070 is housed in a hermetic, high reliability gold ceramic 70 mil microstrip package. The 4 micron emitter to-emitter pitch enables this transistor to be used in ma

Up to 6 GHz Medium Power Silicon Bipolar Transistor

Description Hewlett-Packard’s AT-42070 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42070 is housed in a hermetic, high reliability gold-ceramic 70 mil microstrip package. The 4 micron emitter-to-emitter pitch enables this transistor to be

Up to 6 GHz Medium Power Up to 6 GHz Medium Power

Description Hewlett-Packard’s AT-42085 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42085 is housed in a low cost .085 diameter plastic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different fun

Up to 6 GHz Medium Power Silicon Bipolar Transistor

Description Avago’s AT-42085 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42085 is housed in a low cost .085 diameter plastic package.The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 2

Up to 6 GHz Medium Power Silicon Bipolar Transistor

Description Avago’s AT-42085 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42085 is housed in a low cost .085 diameter plastic package.The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 2

Up to 6 GHz Medium Power Silicon Bipolar Transistor

Description Avago’s AT-42086 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42086 is housed in a low cost surface mount .085 diameter plastic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different f

Up to 6 GHz Medium Power Silicon Bipolar Transistor

Description Agilent’s AT-42086 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42086 is housed in a low cost surface mount .085 diameter plastic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many differe

Up to 6 GHz Medium Power Silicon Bipolar Transistor

Description Agilent’s AT-42086 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42086 is housed in a low cost surface mount .085 diameter plastic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many differe

Up to 6 GHz Medium Power Silicon Bipolar Transistor

Description Avago’s AT-42086 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42086 is housed in a low cost surface mount .085 diameter plastic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different f

Up to 6 GHz Medium Power Silicon Bipolar Transistor

Description Agilent’s AT-42086 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42086 is housed in a low cost surface mount .085 diameter plastic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many differe

Up to 6 GHz Medium Power Silicon Bipolar Transistor

Description Avago’s AT-42086 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42086 is housed in a low cost surface mount .085 diameter plastic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different f

Up to 6 GHz Medium Power Silicon Bipolar Transistor

Description Avago’s AT-42086 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42086 is housed in a low cost surface mount .085 diameter plastic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different f

50 ohms wide varieties standard connectors

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Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip

封装/外壳：模具 包装：卷带（TR） 描述：RF TRANS NPN 12V 9GHZ CHIP 分立半导体产品 晶体管 - 双极（BJT）- 射频

Up to 6 GHz Medium Power Silicon Bipolar Transistor

封装/外壳：4-SMD（100 密耳） 包装：卷带（TR） 描述：RF TRANS NPN 12V 8GHZ 100SMD 分立半导体产品 晶体管 - 双极（BJT）- 射频

Up to 6 GHz Medium Power Silicon Bipolar Transistor

SURFACE MOUNT FUSES

Features • Heat resistant ceramic housing • For line or low voltage applications • Low voltage drop • Internationally approved • High pulse resistance • Also available as holder system 425 with mounted fuse 420

NPN Silicon RF Transistor

DESCRIPTION The START420 is a member of the START family that provide market with the state of the art of RF silicon process. Manufacturated in the third generation of ST proprietary bipolar process, it offers the best mix of gain and NF for given breakdown voltage(BVceo). It reaches perform

Supporting the Intel Celeron processor

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Celeron M Processor on 65 nm Process

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420 LED wire-to-board connector

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