GaAs E-pHEMT GPS Low Noise Amplifier

•1.1 dB NF at 1.575 GHz\n•28 dB Gain at 1.575 GHz\n•15.5 dBm OIP3 at 1.575 GHz\n•11 dBm P1dB at 1.575 GHz\n•Supply (Vd, volts): 2.0-3.0\n•Lead-free/Green/RoHS-compliant Package\n•Package Type: SOT363;

700-6000MHz MMIC LNA

文件：1.66377 Mbytes Page：21 Pages

MMIC LNA

文件：1.37734 Mbytes Page：22 Pages

700-6000MHz MMIC LNA

文件：1.27994 Mbytes Page：20 Pages

MMIC LNA

文件：1.37734 Mbytes Page：22 Pages

NPN video transistor

DESCRIPTION NPN silicon transistor encapsulated in a 4-lead plastic SOT223 package. APPLICATIONS • Primarily intended for cascode output and buffer stages in high resolution colour monitors.

Germanium PNP Transistor Audio Power Amp

Description: The NTE226 is a Germanium PNP transistor in a TO66 type package designed for high–fidelity, high–power output applications. Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . 35V Collector–Emitter Voltage (RB

SILICON TRIACS

Features ● 8 A RMS, 70 A Peak ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 50 mA (Quadrants 1 - 3)

SILICON TRIACS

Features ● 8 A RMS, 70 A Peak ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 50 mA (Quadrants 1 - 3)

SILICON TRIACS

Features ● 8 A RMS, 70 A Peak ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 50 mA (Quadrants 1 - 3)