型号 功能描述 生产厂家&企业 LOGO 操作

Reverse Conducting IGBT with monolithic body diode

Features: • 1.5V typical saturation voltage of IGBT • Trench and Fieldstop technology for 900 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in VCE(sat

Infineon

英飞凌

HighSpeed 2-Technology

• Designed for: - TV – Horizontal Line Deflection • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A - simple Ga

Infineon

英飞凌

N-channel 900V - 30A - TO-247 Very fast PowerMESH IGBT

文件:159.35 Kbytes Page:10 Pages

STMICROELECTRONICS

意法半导体

Reverse Conducting IGBT with monolithic body diode

文件:356.25 Kbytes Page:12 Pages

Infineon

英飞凌

Soft Switching Series

文件:293.73 Kbytes Page:12 Pages

Infineon

英飞凌

更新时间:2025-8-9 20:00:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
24+
NA/
5540
优势代理渠道,原装正品,可全系列订货开增值税票
INFINEON
12+
TO247
209
一级代理,专注军工、汽车、医疗、工业、新能源、电力
INFINEON/英飞凌
22+
TO-247
15000
英飞凌MOS管、IGBT大量有货
INFINEON/英飞凌
19+
3P
50000
INFINEON
25+23+
TO-247
34973
绝对原装正品全新进口深圳现货
INFINEON
24+
TO247
8500
原厂原包原装公司现货,假一赔十,低价出售
INFINEON
23+
TO-247
3200
绝对全新原装!优势供货渠道!特价!请放心订购!
INFINEON
24+
PG-TO247-3
8866
Infineon(英飞凌)
23+
标准封装
7000
原厂原装现货订货价格优势终端BOM表可配单提供样品
INFINEON/英飞凌
25+
3P
860000
明嘉莱只做原装正品现货

ASDM30N90Q-R数据表相关新闻