场效应管(MOSFET)

Reverse Conducting IGBT with monolithic body diode

Features: • 1.5V typical saturation voltage of IGBT • Trench and Fieldstop technology for 900 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in VCE(sat

HighSpeed 2-Technology

• Designed for: - TV – Horizontal Line Deflection • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A - simple Ga

Trench Field-Stop Technology IGBT

FEATURES · Low Saturation Voltage:VCE(sat)= 1.7V@IC= 30A · Easy Parallel Switching Capability Due to Positive · Pb-free Lead Plating, RoHS Compliant APPLICATIONS · Microwave Oven · ASoft Switching Applications for ZCS

N-channel 900V - 30A - TO-247 Very fast PowerMESH IGBT

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Reverse Conducting IGBT with monolithic body diode

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