3.3V 32K X 8 CMOS SRAM (Common I/O)

Features • Pin compatible with AS7C3256 • Industrial and commercial temperature options • Organization: 32,768 words × 8 bits • High speed - 10/12/15/20 ns address access time - 5, 6, 7, 8 ns output enable access time • Very low power consumption: ACTIVE - 180mW max @ 10 ns

3.3V 32K X 8 CMOS SRAM (Common I/O)

Features • Pin compatible with AS7C3256 • Industrial and commercial temperature options • Organization: 32,768 words × 8 bits • High speed - 10/12/15/20 ns address access time - 5, 6, 7, 8 ns output enable access time • Very low power consumption: ACTIVE - 180mW max @ 10 ns

封装/外壳：28-BSOJ（0.300"，7.62mm 宽） 包装：托盘 描述：IC SRAM 256KBIT PARALLEL 28SOJ 集成电路（IC） 存储器

3.3 V 32K x 8 CMOS SRAM

封装/外壳：28-BSOJ（0.300"，7.62mm 宽） 包装：托盘 描述：IC SRAM 256KBIT PARALLEL 28SOJ 集成电路（IC） 存储器

3.3V 32K X 8 CMOS SRAM (Common I/O)

Features • Pin compatible with AS7C3256 • Industrial and commercial temperature options • Organization: 32,768 words × 8 bits • High speed - 10/12/15/20 ns address access time - 5, 6, 7, 8 ns output enable access time • Very low power consumption: ACTIVE - 180mW max @ 10 ns

3.3V 32K X 8 CMOS SRAM (Common I/O)

Features • Pin compatible with AS7C3256 • Industrial and commercial temperature options • Organization: 32,768 words × 8 bits • High speed - 10/12/15/20 ns address access time - 5, 6, 7, 8 ns output enable access time • Very low power consumption: ACTIVE - 180mW max @ 10 ns

3.3V 32K X 8 CMOS SRAM (Common I/O)

Features • Pin compatible with AS7C3256 • Industrial and commercial temperature options • Organization: 32,768 words × 8 bits • High speed - 10/12/15/20 ns address access time - 5, 6, 7, 8 ns output enable access time • Very low power consumption: ACTIVE - 180mW max @ 10 ns