Common data inputs and outputs

DESCRIPTION The AS6C6264A is a static RAM manufactured using a CMOS process technology with the following operating modes: - Read - Standby - Write - Data Retention The memory array is based on a 6-transistor cell. FEATURES  8192 x 8 bit static CMOS RAM  70 ns Access T

8K X 8 BIT LOW POWER CMOS SRAM

8K X 8 BIT LOW POWER CMOS SRAM

FEATURES Access time :55ns Low power consumption: Operation current : 15mA (TYP.), VCC = 3.0V Standby current : 1μ A (TYP.), VCC = 3.0V Wide range power supply : 2.7 ~ 5.5V Fully Compatible with all Competitors 5V product Fully Compatible with all Competitors 3.3V product All inp

8K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The AS6C6264 is a 65,536-bit low power CMOS static random access memory organized as 8,192 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. FEATURES

Common data inputs and outputs

DESCRIPTION The AS6C6264A is a static RAM manufactured using a CMOS process technology with the following operating modes: - Read - Standby - Write - Data Retention The memory array is based on a 6-transistor cell. FEATURES  8192 x 8 bit static CMOS RAM  70 ns Access T

Common data inputs and outputs

DESCRIPTION The AS6C6264A is a static RAM manufactured using a CMOS process technology with the following operating modes: - Read - Standby - Write - Data Retention The memory array is based on a 6-transistor cell. FEATURES  8192 x 8 bit static CMOS RAM  70 ns Access T

Common data inputs and outputs

DESCRIPTION The AS6C6264A is a static RAM manufactured using a CMOS process technology with the following operating modes: - Read - Standby - Write - Data Retention The memory array is based on a 6-transistor cell. FEATURES  8192 x 8 bit static CMOS RAM  70 ns Access T

Common data inputs and outputs

DESCRIPTION The AS6C6264A is a static RAM manufactured using a CMOS process technology with the following operating modes: - Read - Standby - Write - Data Retention The memory array is based on a 6-transistor cell. FEATURES  8192 x 8 bit static CMOS RAM  70 ns Access T

8K X 8 BIT LOW POWER CMOS SRAM

FEATURES Access time :55ns Low power consumption: Operation current : 15mA (TYP.), VCC = 3.0V Standby current : 1μ A (TYP.), VCC = 3.0V Wide range power supply : 2.7 ~ 5.5V Fully Compatible with all Competitors 5V product Fully Compatible with all Competitors 3.3V product All inp

封装/外壳：28-DIP（0.600"，15.24mm） 包装：卷带（TR） 描述：IC SRAM 64KBIT PARALLEL 28DIP 集成电路（IC） 存储器

8K x 8 Bit Low Power CMOS SRAM

8K x 8 Bit Low Power CMOS SRAM

封装/外壳：28-SOIC（0.330"，8.38mm 宽） 包装：卷带（TR） 描述：IC SRAM 64KBIT PARALLEL 28SOP 集成电路（IC） 存储器