Fully static operation

GENERAL DESCRIPTION The AS6C3216A-55TIN is a 33,554,432-bit low power CMOS static random access memory organized as 2,097,152 words by 16 bits or 4,194,304 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the ran

封装/外壳：48-TFSOP（0.724"，18.40mm 宽） 包装：管件 描述：IC SRAM 32MBIT PARALLEL 48TSOP I 集成电路（IC） 存储器

2048K x 16 Bit Low Power CMOS SRAM

封装/外壳：48-TFSOP（0.724"，18.40mm 宽） 包装：托盘 描述：IC SRAM 32MBIT PARALLEL 48TSOP I 集成电路（IC） 存储器

Low Power CMOS SRAM

GENERAL DESCRIPTION The AS6C3216A-55BIN is a 33,554,432-bit low power CMOS static random access memory organized as 2,097,152 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature.