Low Power CMOS SRAM

GENERAL DESCRIPTION The AS6C3216A-55BIN is a 33,554,432-bit low power CMOS static random access memory organized as 2,097,152 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature.

封装/外壳：48-LFBGA 包装：托盘 描述：IC SRAM 32MBIT PARALLEL 48TFBGA 集成电路（IC） 存储器

2048K x 16 Bit Low Power CMOS SRAM

封装/外壳：48-LFBGA 包装：托盘 描述：IC SRAM 32MBIT PARALLEL 48TFBGA 集成电路（IC） 存储器

Fully static operation

GENERAL DESCRIPTION The AS6C3216A-55TIN is a 33,554,432-bit low power CMOS static random access memory organized as 2,097,152 words by 16 bits or 4,194,304 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the ran