5V 1M횞16 CMOS DRAM (EDO)

Functional description The AS4C1M16E5 is a high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) organized as 1,048,576 words × 16 bits. The device is fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely low power and wide op

5V 1M x 16 CMOS DRAM (EDO)

5V 1M횞16 CMOS DRAM (EDO)

Functional description The AS4C1M16E5 is a high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) organized as 1,048,576 words × 16 bits. The device is fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely low power and wide op

5V 1M횞16 CMOS DRAM (EDO)

Functional description The AS4C1M16E5 is a high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) organized as 1,048,576 words × 16 bits. The device is fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely low power and wide op

5V 1M횞16 CMOS DRAM (EDO)

Functional description The AS4C1M16E5 is a high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) organized as 1,048,576 words × 16 bits. The device is fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely low power and wide op

5V 1M횞16 CMOS DRAM (EDO)

Functional description The AS4C1M16E5 is a high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) organized as 1,048,576 words × 16 bits. The device is fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely low power and wide op

5V 1M횞16 CMOS DRAM (EDO)

Functional description The AS4C1M16E5 is a high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) organized as 1,048,576 words × 16 bits. The device is fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely low power and wide op

5V 1M횞16 CMOS DRAM (EDO)

Functional description The AS4C1M16E5 is a high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) organized as 1,048,576 words × 16 bits. The device is fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely low power and wide op

5V 1M횞16 CMOS DRAM (EDO)

Functional description The AS4C1M16E5 is a high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) organized as 1,048,576 words × 16 bits. The device is fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely low power and wide op

5V 1M횞16 CMOS DRAM (EDO)

Functional description The AS4C1M16E5 is a high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) organized as 1,048,576 words × 16 bits. The device is fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely low power and wide op

5V 1M횞16 CMOS DRAM (EDO)

Functional description The AS4C1M16E5 is a high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) organized as 1,048,576 words × 16 bits. The device is fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely low power and wide op

5V 1M횞16 CMOS DRAM (EDO)

Functional description The AS4C1M16E5 is a high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) organized as 1,048,576 words × 16 bits. The device is fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely low power and wide op

EDO DRAM

GENERAL DESCRIPTION The 1 Meg x 16 is a randomly accessed, solid-state memory containing 16,777,216 bits organized in a x16 configuration. FEATURES • JEDEC- and industry-standard x16 timing, functions, pinouts, and packages • High-performance CMOS silicon-gate process • Single power supply (+