Quad LVDS Receivers

General Description The AS1150 and AS1151 are quad flow-through LVDS (low-voltage differential signaling) receivers which accept LVDS differential inputs and convert them to LVCMOS outputs. The receivers are perfect for low power low-noise applications requiring high signaling rates and reduced

Quad LVDS Receivers

General Description\nThe AS1150 and AS1151 are quad flow-through LVDS (low-voltage differential signaling) receivers which accept LVDS differential inputs and convert them to LVCMOS outputs. The receivers are perfect for low power low-noise applications requiring high signaling rates and reduced EMI Flow-Through Pinout\nGuaranteed 500Mbps Data Rate\n300ps Pulse Skew (Max)\nConform to ANSI TIA/EIA-644 LVDS Standards\nSingle +3.3V Supply\nOperating Temperature Range: -40 to +85ºC\nFailsafe Circuit\nIntegrated Termination (AS1151)\n16-pin TSSOP PackageApplications\nThe devices are ideal for digita;

封装/外壳：16-TSSOP（0.173"，4.40mm 宽） 包装：卷带（TR） 描述：IC RECEIVER 0/4 16TSSOP 集成电路（IC） 驱动器，接收器，收发器

变频电源

单、三相交流变频电源采用SPWM高频脉宽调制方式， 先进的直接数字频率合成器(DDS)波形产生技术， 提供干净的正弦波输出；输出频率:40Hz-500Hz(10Hz-1000Hz需定制），输出电压：低档0-150V/高档0-300V（0-2000VAC可订制） 可模拟标准或异常的电压及频率状态， 应用于测试系统、 电子电器、 电机、 照明等领域的生产及研究。 ◇采用先进的直接数字频率合成器（DDS）波形产生技术，频率稳定度高，连续性好；\n◇测量精度高，适用电流正弦半波及其类似的带直流分量的各种波形的测试；\n◇提供嵌入式智能化PC机监控系统；\n◇全范围可调输出电压低档0-150V，高档0-300V，步距0.1V；\n◇输出频率45-120Hz（40-500 Hz选购）,步距0.1Hz；\n◇输出电流限定功能；\n◇具有3组记忆，可以将常用的参数(电压V、频率F、电流I)存储，以便使用时轻松调用；\n◇具有RS232C通讯接口【IEEE488.2(GPIB)可选】，指令执行时间小于10ms；(通讯接口选配)；\n◇保护模式：过压，过流，过载，短路;

Quad LVDS Receivers

General Description The AS1150 and AS1151 are quad flow-through LVDS (low-voltage differential signaling) receivers which accept LVDS differential inputs and convert them to LVCMOS outputs. The receivers are perfect for low power low-noise applications requiring high signaling rates and reduced

封装/外壳：16-TSSOP（0.173"，4.40mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC RECEIVER 0/4 16TSSOP 集成电路（IC） 驱动器，接收器，收发器

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 150 Watts Peak Minimum Gain = 7.8 dB • 100 Tested for Load Mismatch

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 150 Watts Peak Minimum Gain = 7.8 dB • 100 Tested for Load Mismatch

DUAL SWITCHING REGULATOR CONTROL CIRCUIT

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

DUAL SWITCHING REGULATOR CONTROL CIRCUIT

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

DUAL SWITCHING REGULATOR CONTROL CIRCUIT

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N