3GHzMICROWAVERELAYSMiniaturesizeLineupincludes50/75廓type

FEATURES 1.Superminiaturedesign 14×8.6×7.2mm.551×.339×.283inch (standardPCboardterminal) 2.Lineupincludessilenttype.(75Ωtypeonly) Operationnoise(Unit:dB) 3.Excellenthighfrequencycharacteristics 4.Lineupincludessurface-mountterminaltype E

包装：管件 描述：RELAY RF SPDT 500MA 3V 继电器 高频（RF）继电器

包装：管件 描述：RELAY RF SPDT 500MA 3V 继电器 高频（RF）继电器

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,190A,RDS(ON)=4.5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,190A,RDS(ON)=4.5mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,190A,RDS(ON)=4.5mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,190A,RDS(ON)=4.5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.