N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 190A, RDS(ON) = 4.5mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 190A, RDS(ON) = 4.5mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired.

3 GHz MICROWAVE RELAYS Miniature size Lineup includes 50/75廓 type

FEATURES 1. Super miniature design 14 × 8.6 × 7.2 mm .551 × .339 × .283 inch (standard PC board terminal) 2. Lineup includes silent type. (75Ω type only) Operation noise (Unit: dB) 3. Excellent high frequency characteristics 4. Lineup includes surface-mount terminal type E

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 190A, RDS(ON) = 4.5mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 190A, RDS(ON) = 4.5mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.