N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET

N- CHANNEL ENHANCEMENT MODE RF POWER MOSFET The ARF442 and ARF443 comprise a symmetric pair of RF power transistors designed for narrow-band push-pull commercial, medical and industrial RF power amplifier applications. • Specified 100 Volt, 13.56 MHz Characteristics: • Output Power =

N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET

N-Channel Power MOSFETs, 8A, 450 V/500V

Description These devices are n-channel, enhancement mode, power MOSFETs designed sepecially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers.

N-CHANNEL POWER MOSFETS

FEATURES • Low Boston) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polyslllcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High vol

0.39 INCH (9.9MM) SINGLE DIGIT STICK DISPLAY

N-Channel JFET Monolithic Dual

DESCRIPTION The U443 Series is an N-Channel Monolithic Dual JFET designed for high speed amplifier circuits. Featuring high gain ( > 6 mS typical), low leakage ( FEATURES • High Gain . . . . . . . . . . . . . . . . . . . . . . . gfs > 6 mS typical • Low Leakage . . . . . . . . . . . . . . . .

0.39 INCH (9.9MM) SINGLE DIGIT STICK DISPLAY

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