N- CHANNEL ENHANCEMENT MODE RF POWER MOSFET

The ARF442 and ARF443 comprise a symmetric pair of RF power transistors designed for narrow-band push-pull commercial, medical and industrial RF power amplifier applications.

• Specified 100 Volt, 13.56 MHz Characteristics:

• Output Power = 200 Watts.

• Gain = 22dB (Typ.)

• Efficiency = 73 (Typ.)

• Low Cost Common Source RF Package.

• Very High Breakdown for Improved Ruggedness.

• Low Thermal Resistance.

• Nitride Passivated Die for Improved Reliability.