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4 MEG x 16 EDO DRAM

[MEMPHIS] GENERAL DESCRIPTION The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations containing 16 bits each. The 4,194,304 memory locations are

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更新时间:2025-12-12 9:08:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MEMPHIS
23+
TSSOP
50000
全新原装正品现货,支持订货
NSC/国半
专业铁帽
CAN4
67500
铁帽原装主营-可开原型号增税票
MXIC
2023+
TSOP
3000
进口原装现货
MEMPHIS
22+
BGA
12245
现货,原厂原装假一罚十!
MEMPHIS
24+
BGA
9600
原装现货,优势供应,支持实单!
MEMPHIS
24+
原厂原装
5850
ELE优势库存国外货源
MEMPHIS
21+
BGA
1810
MEMPHIS
24+
BGA
880000
明嘉莱只做原装正品现货
MEMPHIS
24+
BGA
54000
郑重承诺只做原装进口现货
MXIC
23+
TSOP
8560
受权代理!全新原装现货特价热卖!

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