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位置：首页 > IC中文资料第5172页 > AR05

AR05价格

参考价格：￥67.3040

型号：AR05BTC0110 品牌：VIKING TECH AMERICA CORP 备注：这里有AR05多少钱，2025年最近7天走势，今日出价，今日竞价，AR05批发/采购报价，AR05行情走势销售排行榜，AR05报价。
型号 功能描述 生产厂家 企业 LOGO 操作
AR05

HIGH PRECISION CHIP RESISTORS

文件：1.2203 Mbytes Page：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

AR0521P1

1-Line Ultra Low Capacitance Bi-directional TVS Diode

Features • Ultra small package: 1.0x0.6x0.5mm • Ultra low capacitance: 0.3pF typical • Ultra low leakage: nA level • Operating voltage: 5V • Low clamping voltage • AEC-Q101 qualified • Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±25kV Contact dis

DGNJDZ

南晶电子

AR0522

CMOS Image Sensor, 5.1 MP, 1/2.5, Near Infra-Red Enhancement

Features • 5 Mp at 60 fps for Excellent Video Performance • Small Optical Format (1/2.5-inch) • Color Filter Array : RGB and Monochrome • 1440p Mode for 16:9 Video • Superior Low-light Performance • 2.2 m Back Side Illuminated Pixel Technology • Supports Line Interleaved T1/T2 Readout to En

ONSEMI

安森美半导体

AR0522SRSC09SURA0-DP

CMOS Image Sensor, 5.1 MP, 1/2.5, Near Infra-Red Enhancement

Features • 5 Mp at 60 fps for Excellent Video Performance • Small Optical Format (1/2.5-inch) • Color Filter Array : RGB and Monochrome • 1440p Mode for 16:9 Video • Superior Low-light Performance • 2.2 m Back Side Illuminated Pixel Technology • Supports Line Interleaved T1/T2 Readout to En

ONSEMI

安森美半导体

AR0522SRSC09SURA0-DP1

CMOS Image Sensor, 5.1 MP, 1/2.5, Near Infra-Red Enhancement

Features • 5 Mp at 60 fps for Excellent Video Performance • Small Optical Format (1/2.5-inch) • Color Filter Array : RGB and Monochrome • 1440p Mode for 16:9 Video • Superior Low-light Performance • 2.2 m Back Side Illuminated Pixel Technology • Supports Line Interleaved T1/T2 Readout to En

ONSEMI

安森美半导体

AR0522SRSC09SURA0-DR

CMOS Image Sensor, 5.1 MP, 1/2.5, Near Infra-Red Enhancement

Features • 5 Mp at 60 fps for Excellent Video Performance • Small Optical Format (1/2.5-inch) • Color Filter Array : RGB and Monochrome • 1440p Mode for 16:9 Video • Superior Low-light Performance • 2.2 m Back Side Illuminated Pixel Technology • Supports Line Interleaved T1/T2 Readout to En

ONSEMI

安森美半导体

AR0522SRSC09SURA0-DR1

CMOS Image Sensor, 5.1 MP, 1/2.5, Near Infra-Red Enhancement

Features • 5 Mp at 60 fps for Excellent Video Performance • Small Optical Format (1/2.5-inch) • Color Filter Array : RGB and Monochrome • 1440p Mode for 16:9 Video • Superior Low-light Performance • 2.2 m Back Side Illuminated Pixel Technology • Supports Line Interleaved T1/T2 Readout to En

ONSEMI

安森美半导体

AR0522SRSM09SURA0-DP

CMOS Image Sensor, 5.1 MP, 1/2.5, Near Infra-Red Enhancement

Features • 5 Mp at 60 fps for Excellent Video Performance • Small Optical Format (1/2.5-inch) • Color Filter Array : RGB and Monochrome • 1440p Mode for 16:9 Video • Superior Low-light Performance • 2.2 m Back Side Illuminated Pixel Technology • Supports Line Interleaved T1/T2 Readout to En

ONSEMI

安森美半导体

AR0522SRSM09SURA0-DR

CMOS Image Sensor, 5.1 MP, 1/2.5, Near Infra-Red Enhancement

Features • 5 Mp at 60 fps for Excellent Video Performance • Small Optical Format (1/2.5-inch) • Color Filter Array : RGB and Monochrome • 1440p Mode for 16:9 Video • Superior Low-light Performance • 2.2 m Back Side Illuminated Pixel Technology • Supports Line Interleaved T1/T2 Readout to En

ONSEMI

安森美半导体

AR0531D3

1-Line Low Capacitance Bi-directional TVS Diode

Features  360W peak pulse power (8/20μs)  Ultra low capacitance: 1pF typical  Ultra low leakage: nA level  Operating voltage: 5V  Low clamping voltage  Protects one power line or data line  Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV

SY

顺烨电子

AR0544

1/4.2-inch 5 MP CMOS Digital Image Sensor

General Description The onsemi AR0544 is a stacked 1/4.2−inch back side illuminated (BSI) CMOS active−pixel digital image sensor with a pixel array of 2592 x 1944 (2608H x 1960V including border pixels). The AR0544 has enhanced NIR response. It incorporates sophisticated on−chip camera functi

ONSEMI

安森美半导体

AR0544

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

ONSEMI

安森美半导体

AR0544_V01

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

ONSEMI

安森美半导体

AR0544CSSC11SMKA1-CP

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

ONSEMI

安森美半导体

AR0544CSSC11SMKA1-CP2

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

ONSEMI

安森美半导体

AR0544CSSC11SMKA1-CR

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

ONSEMI

安森美半导体

AR0544CSSC11SMKAH3-GEVB

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

ONSEMI

安森美半导体

AR0544CSSC33SMKA1-CP

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

ONSEMI

安森美半导体

AR0544CSSC33SMKA1-CP2

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

ONSEMI

安森美半导体

AR0544CSSC33SMKA1-CR

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

ONSEMI

安森美半导体

AR0544CSSC33SMKAH3-GEVB

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

ONSEMI

安森美半导体

AR0544CSSH11SMKA1-CP

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

ONSEMI

安森美半导体

AR0544CSSH11SMKA1-CP2

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

ONSEMI

安森美半导体

AR0544CSSH11SMKA1-CR

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

ONSEMI

安森美半导体

AR0544CSSH11SMKAH3-GEVB

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

ONSEMI

安森美半导体

AR0544CSSH33SMKA1-CP

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

ONSEMI

安森美半导体

AR0544CSSH33SMKA1-CP2

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

ONSEMI

安森美半导体

AR0544CSSH33SMKA1-CR

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

ONSEMI

安森美半导体

AR0544CSSH33SMKAH3-GEVB

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

ONSEMI

安森美半导体

AR0544CSSM11SMKA1-CP

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

ONSEMI

安森美半导体

AR0544CSSM11SMKA1-CP2

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

ONSEMI

安森美半导体

AR0544CSSM11SMKA1-CR

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

ONSEMI

安森美半导体

AR0544CSSM11SMKAH3-GEVB

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

ONSEMI

安森美半导体

AR0500102

M12-A Female

文件：164.43 Kbytes Page：2 Pages

ALPHAWIRE

AR0500106

M12-A Female

文件：163.29 Kbytes Page：2 Pages

ALPHAWIRE

AR0501D5

1-Line Low Capacitance TVS Diode

文件：748.33 Kbytes Page：4 Pages

APMICROApplied Power Microelectronics Co.,Ltd.

应能江苏应能微电子股份有限公司

AR0501D5

High Voltage TVS

ETC

知名厂家

AR0501D9

Low Capacitance TVS

ETC

知名厂家

AR0501S2

Low Capacitance TVS

ETC

知名厂家

AR0502P1

2-Line Ultra Low Capacitance TVS Diode

文件：707.35 Kbytes Page：4 Pages

APMICROApplied Power Microelectronics Co.,Ltd.

应能江苏应能微电子股份有限公司

AR0502P6

2-Line Ultra Low Capacitance TVS Diode

文件：636.86 Kbytes Page：4 Pages

APMICROApplied Power Microelectronics Co.,Ltd.

应能江苏应能微电子股份有限公司

AR0502S1

2-Line Ultra-Low Capacitance TVS Diode Array

文件：766.04 Kbytes Page：5 Pages

APMICROApplied Power Microelectronics Co.,Ltd.

应能江苏应能微电子股份有限公司

AR0502S2

2-Line Ultra Low Capacitance TVS Diode

文件：784.63 Kbytes Page：5 Pages

APMICROApplied Power Microelectronics Co.,Ltd.

应能江苏应能微电子股份有限公司

AR0502S5

2-Line Ultra Low Capacitance TVS Diode Array

文件：798.11 Kbytes Page：5 Pages

APMICROApplied Power Microelectronics Co.,Ltd.

应能江苏应能微电子股份有限公司

AR0504P3

4-Line Low Capacitance TVS Diode Array

文件：851.49 Kbytes Page：6 Pages

APMICROApplied Power Microelectronics Co.,Ltd.

应能江苏应能微电子股份有限公司

AR0504PC

Ultra Low Capacitance TVS Diode Array

文件：636.57 Kbytes Page：4 Pages

APMICROApplied Power Microelectronics Co.,Ltd.

应能江苏应能微电子股份有限公司

AR0504S6

4-Line Ultra Low Capacitance TVS Diode Array

文件：745.98 Kbytes Page：4 Pages

APMICROApplied Power Microelectronics Co.,Ltd.

应能江苏应能微电子股份有限公司

AR0506PA

6-Line Ultra Low Capacitance TVS Diode Array

文件：580.43 Kbytes Page：5 Pages

APMICROApplied Power Microelectronics Co.,Ltd.

应能江苏应能微电子股份有限公司

AR0511D3

1-Line Low Capacitance Bi-directional TVS Diode

文件：759.27 Kbytes Page：4 Pages

APMICROApplied Power Microelectronics Co.,Ltd.

应能江苏应能微电子股份有限公司

AR0521

Image Sensor, CMOS, 1/2.5

文件：157.89 Kbytes Page：2 Pages

ONSEMI

安森美半导体

AR0521D3

1-Line Ultra Low Capacitance Bi-directional TVS Diode

文件：717.98 Kbytes Page：4 Pages

APMICROApplied Power Microelectronics Co.,Ltd.

应能江苏应能微电子股份有限公司

AR0521D5

1-Line Ultra Low Capacitance Bi-directional TVS Diode

文件：733.99 Kbytes Page：4 Pages

APMICROApplied Power Microelectronics Co.,Ltd.

应能江苏应能微电子股份有限公司

AR0521P0

1-Line Ultra Low Capacitance Bi-directional TVS Diode

文件：516.559 Kbytes Page：4 Pages

APMICROApplied Power Microelectronics Co.,Ltd.

应能江苏应能微电子股份有限公司

AR0521P0L

1-Line Ultra Low Capacitance Bi-directional TVS Diode

文件：433.38 Kbytes Page：4 Pages

APMICROApplied Power Microelectronics Co.,Ltd.

应能江苏应能微电子股份有限公司

AR0521P1

1-Line Ultra Low Capacitance Bi-directional TVS Diode

文件：583.29 Kbytes Page：6 Pages

APMICROApplied Power Microelectronics Co.,Ltd.

应能江苏应能微电子股份有限公司

AR0521P1L

1-Line Ultra Low Capacitance Bi-directional TVS Diode

文件：461.37 Kbytes Page：4 Pages

APMICROApplied Power Microelectronics Co.,Ltd.

应能江苏应能微电子股份有限公司

AR0521P6

1-Line Ultra Low Capacitance Bi-directional TVS Diode

文件：693.33 Kbytes Page：4 Pages

APMICROApplied Power Microelectronics Co.,Ltd.

应能江苏应能微电子股份有限公司

AR0521SR2C09SURA0-DP

Image Sensor, CMOS, 1/2.5

文件：157.89 Kbytes Page：2 Pages

ONSEMI

安森美半导体

AR0521SR2C09SURA0-DP1

包装：散装 描述：5MP 1/2 CIS SO 传感器，变送器 图像传感器、镜头、摄像头

ONSEMI

安森美半导体

AR0521SR2C09SURA0-DP-E

Image Sensor, CMOS, 1/2.5

文件：157.89 Kbytes Page：2 Pages

ONSEMI

安森美半导体

AR05产品属性

  • 类型

    描述

  • 型号

    AR05

  • 制造商

    APTINA

  • 功能描述

    1/4-Inch 5Mp CMOS Digital Image Sensor 1080p/30 2Kb one-time programmable memory(OTPM)

AR05供应商更多...

更新时间：2025-12-26 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
AR0521SR2M09SURA0-DP
ON(安森美)
24+
标准封装
14548
全新原装正品/价格优惠/质量保障
询价
深圳市凌旭科技有限公司
AR05CA-V-LF
AR
2016+
QFPPB
6000
只做原装,假一罚十,公司可开17%增值税发票!
询价
深圳市威雅利发展有限公司
AR0501P1
AppliedPo
17+
DFN1006-2
8040
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
中天科工半导体（深圳）有限公司
AR0501D9
APPLIEDPOWER
25+
原装
20300
APPLIEDPOWER原装特价AR0501D9即刻询购立享优惠#长期有货
询价
深圳市科恒伟业电子有限公司
AR0501D3
APPLIED POWER/应能微
2450+
SOD323
9850
只做原装正品现货或订货假一赔十!
询价
深圳市得捷芯城科技有限公司
AR0521SR2C09SURA0-DP
ON(安森美)
24+
PLCC-52
19048
原厂可订货,技术支持,直接渠道。可签保供合同
询价
深圳市正迈科技有限公司
AR0543CSSC25SUD20
ONSEMI
23+
原厂原封装
999999
正迈科技☑原装☑进口☑诚信大量原装
询价
贸泽芯城（深圳）电子科技有限公司
AR0501P1
APPLIEDPO
23+
DFN1006-2
66000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
深圳市祥瑞智科技有限公司
AR0543CSSC25SUD20
APTINA
25+
18000
原装正品!!!优势库存!0755-83210901
询价
深圳市中联芯电子有限公司
AR0502P5
Semitehelec
24+
DFN1510-6
11000
原装正品 有挂有货 假一赔十
询价

AR05芯片相关品牌

AR05规格书下载地址

AR05参数引脚图相关

AR05数据表相关新闻

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