型号 功能描述 生产厂家&企业 LOGO 操作
AR0544

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

ONSEMI

安森美半导体

AR0544

1/4.2-inch 5 MP CMOS Digital Image Sensor

General Description The onsemi AR0544 is a stacked 1/4.2−inch back side illuminated (BSI) CMOS active−pixel digital image sensor with a pixel array of 2592 x 1944 (2608H x 1960V including border pixels). The AR0544 has enhanced NIR response. It incorporates sophisticated on−chip camera functi

ONSEMI

安森美半导体

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

ONSEMI

安森美半导体

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

ONSEMI

安森美半导体

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

ONSEMI

安森美半导体

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

ONSEMI

安森美半导体

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

ONSEMI

安森美半导体

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

ONSEMI

安森美半导体

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

ONSEMI

安森美半导体

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

ONSEMI

安森美半导体

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

ONSEMI

安森美半导体

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

ONSEMI

安森美半导体

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

ONSEMI

安森美半导体

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

ONSEMI

安森美半导体

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

ONSEMI

安森美半导体

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

ONSEMI

安森美半导体

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

ONSEMI

安森美半导体

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

ONSEMI

安森美半导体

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

ONSEMI

安森美半导体

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

ONSEMI

安森美半导体

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

ONSEMI

安森美半导体

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

ONSEMI

安森美半导体

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

ONSEMI

安森美半导体

Single-Ended Cordsets

Basic features Approval/Conformity CE cULus EAC WEEE

Balluff

巴鲁夫

Bipolar Transistor -100V, -2A, Low VCE(sat), PNP Single TP/TP-FA

Features • Adoption of FBET, MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, Relay drivers, lamp drivers, motor drivers

ONSEMI

安森美半导体

Evaluation PCB description

文件:544.28 Kbytes Page:4 Pages

AVAGO

安华高

更新时间:2025-8-9 15:37:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VIKING
25+
5kreel
5000
原装正品,欢迎来电咨询!
VIKING/光颉
2447
0805
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
VIKING/光颉
23+
SMD
6800
专注配单,只做原装进口现货
VIKING/光颉
23+
SMD
6800
专注配单,只做原装进口现货
VIKINGTECHAMERICACORP
21+
NA
1000
只做原装,一定有货,不止网上数量,量多可订货!
APPLIEDPOWER
25+
MSOP-10
20300
APPLIEDPOWER原装特价AR0544MP即刻询购立享优惠#长期有货
VIKING
20+
R0805
5000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
onsemi
2025+
55740
VIKING/光颉
24+
5kreel
60000
全新原装现货
SXSEMI
24+
SOT-23
900000
原装进口特价

AR0544数据表相关新闻