1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

1/4.2-inch 5 MP CMOS Digital Image Sensor

General Description The onsemi AR0544 is a stacked 1/4.2−inch back side illuminated (BSI) CMOS active−pixel digital image sensor with a pixel array of 2592 x 1944 (2608H x 1960V including border pixels). The AR0544 has enhanced NIR response. It incorporates sophisticated on−chip camera functi

Image Sensor, 5 MP, Rolling Shutter, Hyperlux™ LP

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

1/4.2-inch 5 MP CMOS Digital Image Sensor

Features  5 MP CMOS Sensor with Advanced 1.4 m Pixel Stacked BSI Technology  Enhanced NIR Response at 850 nm and 940 nm Wavelength  LI-HDR: Supports Line Interleaved T1/T2 Readout to Enable HDR Processing in ISP Chip  enhanced Dynamic Range (eDR)  Super Low Power Mode  Wake on Motio

Single-Ended Cordsets

Basic features Approval/Conformity CE cULus EAC WEEE

Bipolar Transistor -100V, -2A, Low VCE(sat), PNP Single TP/TP-FA

Features • Adoption of FBET, MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, Relay drivers, lamp drivers, motor drivers

Evaluation PCB description

文件：544.28 Kbytes Page：4 Pages