Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 11.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.75Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, D

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 13A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.75Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 13A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.75Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 11.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.75Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, D

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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POWER MOS V 800V 12A 0.750 Ohm

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

文件：64.91 Kbytes Page：4 Pages

isc N-Channel MOSFET Transistor

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N-Channel MOSFET

Magnet Wire, #18 Sol BC, Polyester/Amide-imide Polymer Ins

Product Description Magnet Wire, 18AWG (Solid) Bare Copper, Polyester/Amide-imide Polymer Insulation, CLASS 200 MW 35-C

500 MHz, G = -1 and 2 Triple Video Buffers with Disable

PRODUCT DESCRIPTION The AD8074/AD8075 are high-speed triple video buffers with G = +1 and +2 respectively. They have a –3 dB full signal bandwidth in excess of 450 MHz, along with slew rates in excess of 1400 V/µs. With better than –80 dB of all hostile crosstalk and 90 dB isolation, they are use

500 MHz, G = 1 and 2 Triple Video Buffers with Disable

PRODUCT DESCRIPTION The AD8074/AD8075 are high-speed triple video buffers with G = +1 and +2 respectively. They have a –3 dB full signal bandwidth in excess of 450 MHz, along with slew rates in excess of 1400 V/µs. With better than –80 dB of all hostile crosstalk and 90 dB isolation, they are use

500 MHz, G = 1 and 2 Triple Video Buffers with Disable

FEATURES Dual Supply
5 V High-Speed Fully Buffered Inputs and Outputs 600 MHz Bandwidth (–3 dB) 200 mV p-p 500 MHz Bandwidth (–3 dB) 2 V p-p 1600 V/s Slew Rate, G = +1 1350 V/s Slew Rate, G = +2 Fast Settling Time: 4 ns Low Supply Current:

500 MHz, G = -1 and 2 Triple Video Buffers with Disable

PRODUCT DESCRIPTION The AD8074/AD8075 are high-speed triple video buffers with G = +1 and +2 respectively. They have a –3 dB full signal bandwidth in excess of 450 MHz, along with slew rates in excess of 1400 V/µs. With better than –80 dB of all hostile crosstalk and 90 dB isolation, they are use