Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast

isc N-Channel MOSFET Transistor

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N-Channel MOSFET

Magnet Wire, #18 Sol BC, Polyester/Amide-imide Polymer Ins

Product Description Magnet Wire, 18AWG (Solid) Bare Copper, Polyester/Amide-imide Polymer Insulation, CLASS 200 MW 35-C

500 MHz, G = 1 and 2 Triple Video Buffers with Disable

FEATURES Dual Supply
5 V High-Speed Fully Buffered Inputs and Outputs 600 MHz Bandwidth (–3 dB) 200 mV p-p 500 MHz Bandwidth (–3 dB) 2 V p-p 1600 V/s Slew Rate, G = +1 1350 V/s Slew Rate, G = +2 Fast Settling Time: 4 ns Low Supply Current:

500 MHz, G = -1 and 2 Triple Video Buffers with Disable

PRODUCT DESCRIPTION The AD8074/AD8075 are high-speed triple video buffers with G = +1 and +2 respectively. They have a –3 dB full signal bandwidth in excess of 450 MHz, along with slew rates in excess of 1400 V/µs. With better than –80 dB of all hostile crosstalk and 90 dB isolation, they are use

500 MHz, G = 1 and 2 Triple Video Buffers with Disable

PRODUCT DESCRIPTION The AD8074/AD8075 are high-speed triple video buffers with G = +1 and +2 respectively. They have a –3 dB full signal bandwidth in excess of 450 MHz, along with slew rates in excess of 1400 V/µs. With better than –80 dB of all hostile crosstalk and 90 dB isolation, they are use

500 MHz, G = -1 and 2 Triple Video Buffers with Disable

PRODUCT DESCRIPTION The AD8074/AD8075 are high-speed triple video buffers with G = +1 and +2 respectively. They have a –3 dB full signal bandwidth in excess of 450 MHz, along with slew rates in excess of 1400 V/µs. With better than –80 dB of all hostile crosstalk and 90 dB isolation, they are use