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型号 功能描述 生产厂家&企业 LOGO 操作
APT8030

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FastRecovery

ADPOW

Advanced Power Technology

ADPOW
APT8030B2VFR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FastRecovery

ADPOW

Advanced Power Technology

ADPOW
APT8030B2VR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitchi

ADPOW

Advanced Power Technology

ADPOW
APT8030B2VR

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=27A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
APT8030JN

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

ADPOW

Advanced Power Technology

ADPOW
APT8030JVFR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FastRecovery

ADPOW

Advanced Power Technology

ADPOW
APT8030JVFR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FastRecovery

ADPOW

Advanced Power Technology

ADPOW
APT8030JVFR_05

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FastRecovery

ADPOW

Advanced Power Technology

ADPOW
APT8030JVR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FastRecovery

ADPOW

Advanced Power Technology

ADPOW
APT8030LVFR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FastRecovery

ADPOW

Advanced Power Technology

ADPOW
APT8030LVFR

POWERMOSV

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FastRecovery

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
APT8030LVFR

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=27A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
APT8030LVFRG

POWERMOSV

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FastRecovery

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
APT8030LVR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitchi

ADPOW

Advanced Power Technology

ADPOW
APT8030LVR

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=27A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
APT8030B2VFR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

文件：62.15 Kbytes Page：4 Pages

ADPOW

Advanced Power Technology

ADPOW
APT8030B2VFR_05

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

文件：62.15 Kbytes Page：4 Pages

ADPOW

Advanced Power Technology

ADPOW
APT8030LVFR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

文件：63.46 Kbytes Page：4 Pages

ADPOW

Advanced Power Technology

ADPOW
APT8030LVFR_05

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

文件：63.46 Kbytes Page：4 Pages

ADPOW

Advanced Power Technology

ADPOW
AD8030

LowPower,HighSpeedRail-to-RailInput/OutputAmplifier

GENERALDESCRIPTION TheAD8029(single),AD8030(dual),andAD8040(quad)arerail-to-railinputandoutputhighspeedamplifierswithaquiescentcurrentofonly1.3mAperamplifier.Despitetheirlowpowerconsumption,theamplifiersprovideexcellentperformancewith125MHzsmallsignalband

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
8030

Itsacompletetoolkitthatfitsinyourpalm.

文件：1.8415 Mbytes Page：16 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2
8030

RadialLeadThermalCutoff

文件：57.59 Kbytes Page：1 Pages

NTE

NTE Electronics, Inc

NTE
8030

TYPENFEMALETOTYPENMALERADIUSR/AADAPTER

文件：122.81 Kbytes Page：1 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2
AD8030

LowPower,HighSpeedRail-to-RailInput/OutputAmplifier

文件：670.88 Kbytes Page：25 Pages

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

APT8030产品属性

  • 类型

    描述

  • 型号

    APT8030

  • 制造商

    ADPOW

  • 制造商全称

    Advanced Power Technology

  • 功能描述

    Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

APT8030供应商更多...

更新时间：2024-5-9 16:39:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市艾宇特电子科技有限公司
APT8030LVFR
APT
2048+
TO264
9851
只做原装正品现货!或订货假一赔十!
询价
深圳市赛能新源半导体有限公司
APT8030LVFR
APT
21+
TO-264
56000
公司进口原装现货 批量特价支持
询价
深圳市昌和盛利电子有限公司
APT8030JVFR
APT
23+
模块
3562
询价
深圳市特顺芯科技有限公司
APT8030LVR
APT
08+(pbfree)
8866
询价
深圳市毅创腾电子科技有限公司
APT8030JVFR
APT
23+
模块
240
全新原装正品,量大可订货!可开17%增值票!价格优势!
询价
易创佳业科技（深圳）有限公司
APT8030B2VFR
APTMICROSEMI
23+
T-MAXB2
6000
原装正品，支持实单
询价
深圳市弘扬芯城科技有限公司
APT8030LVRG
MICROCHIP(美国微芯)
23+
TO2643
6000
询价
深圳市天成基业科技有限公司
APT8030LVR
APT
20+/21+
TO264
5855
全新原装进口价格优势
询价
标准国际(香港)有限公司
APT8030JN
APT
92
1
公司优势库存 热卖中!!
询价
深圳市品优时代科技有限公司
APT8030LVFRG
MICROSEMI
2019
TO-264
19700
INFINEON品牌专业原装优质
询价

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