位置：首页 > IC中文资料第6124页 > APT8030
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
APT8030 | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery | ADPOW |   | |
APT8030 | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | APT 晶科 | | |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery | ADPOW | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switchi | ADPOW | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 27A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 27A@ TC=25℃ · Drain Source Voltage -VDSS= 800V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 10V APPLICATIONS · DC-DC Converters · AC and DC Motor Drives · Power Factor Correction (PFC) | ISC 无锡固电 | | ||
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | ADPOW | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery | ADPOW | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery | ADPOW | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery | ADPOW | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery | ADPOW | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery | ADPOW | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 27A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co | ISC 无锡固电 | | ||
POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery | Microsemi 美高森美 | | ||
POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery | Microsemi 美高森美 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 27A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D | ISC 无锡固电 | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switchi | ADPOW | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 文件：62.15 Kbytes Page：4 Pages | ADPOW | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 文件：62.15 Kbytes Page：4 Pages | ADPOW | | ||
FREDFETs | Microchip 微芯科技 | | ||
POWER MOS V 800V 27A 0.300 Ohm | APT 晶科 | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 文件：63.46 Kbytes Page：4 Pages | ADPOW | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 文件：63.46 Kbytes Page：4 Pages | ADPOW | | ||
Inline flowmeter for continuous measurements The paddle wheel flowmeter Type 8030/8030-HT is especially designed for use with neutral, slightly aggressive, solid free liquids. The device is made up of a compact Inline sensor-fitting (Type S030/S030‑HT) and a transmitter (Type SE30/SE30‑HT). The device is quickly and easily assembled than | BURKERT 宝帝流体控制系统 | | ||
Specialty Pins 文件：173.18 Kbytes Page：1 Pages | Heyco | | ||
Its a complete tool kit that fits in your palm. 文件：1.8415 Mbytes Page：16 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Radial Lead Thermal Cutoff 文件：57.59 Kbytes Page：1 Pages | NTE | | ||
TYPE N FEMALE TO TYPE N MALE RADIUS R/A ADAPTER 文件：122.81 Kbytes Page：1 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |
APT8030产品属性
- 类型
描述
- 型号
APT8030
- 制造商
ADPOW
- 制造商全称
Advanced Power Technology
- 功能描述
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MROSEMI/美高森美 |
24+ |
NA/ |
3297 |
原装现货,当天可交货,原型号开票 |
|||
APT/晶科电子 |
25+ |
SOT227 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
APT |
1932+ |
TO-264 |
213 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
APT |
23+ |
TO-264 |
8118 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
Microch |
20+ |
NA |
33560 |
原装优势主营型号-可开原型号增税票 |
|||
MICROSEMI/美高森美 |
21+ |
TO-3PL |
120000 |
长期代理优势供应 |
|||
MICROSEMI/美高森美 |
25+ |
TO264 |
880000 |
明嘉莱只做原装正品现货 |
|||
MICROSEMI |
25+23+ |
TO-264 |
24444 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
APT |
22+ |
TO-3PL |
8000 |
原装正品支持实单 |
|||
MICROSEMI/美高森美 |
2450+ |
TO264 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
APT8030规格书下载地址
APT8030参数引脚图相关
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- ba028
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- avb
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- atmega16
- atmega
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- at91sam9261
- at89s52
- at89s51
- at89c52
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- arm内核
- arm11
- APU3137
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- APU3037
- APU2470
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- APT8075
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- APT8030LVRG
- APT8030LVR
- APT8030LVFRG
- APT8030LVFR_05
- APT8030LVFR
- APT8030JVR
- APT8030JVFR_05
- APT8030JVFR
- APT8030JNFR
- APT8030JN
- APT8030FN
- APT8030DN
- APT8030CFN
- APT8030B2VRG
- APT8030B2VR
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2019-3-5
DdatasheetPDF页码索引
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