Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

• Fast Recovery Body Diode

• 100 Avalanche Tested

• Lower Leakage

• New T-MAX™ Package

(Clip-mounted TO-247 Package)

• Faster Switching