位置：首页 > IC中文资料第1217页 > APT8030LVFR
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
APT8030LVFR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery | ADPOW |   | |
APT8030LVFR | POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery | Microsemi 美高森美 | | |
APT8030LVFR | isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 27A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co | ISC 无锡固电 | | |
APT8030LVFR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 文件：63.46 Kbytes Page：4 Pages | ADPOW | | |
APT8030LVFR | POWER MOS V | Microchip 微芯科技 | | |
POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery | Microsemi 美高森美 | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 文件：63.46 Kbytes Page：4 Pages | ADPOW | | ||
FREDFETs | Microchip 微芯科技 | | ||
Inline flowmeter for continuous measurements The paddle wheel flowmeter Type 8030/8030-HT is especially designed for use with neutral, slightly aggressive, solid free liquids. The device is made up of a compact Inline sensor-fitting (Type S030/S030‑HT) and a transmitter (Type SE30/SE30‑HT). The device is quickly and easily assembled than | BURKERT 宝帝流体控制系统 | | ||
Specialty Pins 文件：173.18 Kbytes Page：1 Pages | Heyco | | ||
Its a complete tool kit that fits in your palm. 文件：1.8415 Mbytes Page：16 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | | ||
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APT8030LVFR产品属性
- 类型
描述
- 型号
APT8030LVFR
- 功能描述
MOSFET N-CH 800V 27A TO-264
- RoHS
是
- 类别
分离式半导体产品 >> FET - 单
- 系列
POWER MOS V®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
APT |
23+ |
TO-3PL |
5000 |
原装正品,假一罚十 |
|||
MICROCHIP(美国微芯) |
24+ |
TO-264 |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
|||
APT |
22+ |
TO-3PL |
8000 |
原装正品支持实单 |
|||
APT |
23+ |
TO-264 |
6000 |
原装正品，支持实单 |
|||
MICROSEMI/美高森美 |
25+ |
TO264 |
880000 |
明嘉莱只做原装正品现货 |
|||
APT |
23+ |
TO-3PL |
7300 |
专注配单,只做原装进口现货 |
|||
APT |
2447 |
TO39 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
APT |
24+ |
8866 |
|||||
MICROSEMI/美高森美 |
23+ |
TO264 |
8678 |
原厂原装 |
|||
Microch |
20+ |
NA |
33560 |
原装优势主营型号-可开原型号增税票 |
APT8030LVFR规格书下载地址
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DdatasheetPDF页码索引
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