位置：首页 > IC中文资料第8208页 > APT8030LVFR
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
APT8030LVFR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery | ADPOW |   | |
APT8030LVFR | POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery | MICROSEMI 美高森美 | | |
APT8030LVFR | isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 27A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co | ISC 无锡固电 | | |
APT8030LVFR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 文件：63.46 Kbytes Page：4 Pages | ADPOW | | |
APT8030LVFR | POWER MOS V | MICROCHIP 微芯科技 | | |
POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery | MICROSEMI 美高森美 | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 文件：63.46 Kbytes Page：4 Pages | ADPOW | | ||
FREDFETs | MICROCHIP 微芯科技 | | ||
Inline flowmeter for continuous measurements The paddle wheel flowmeter Type 8030/8030-HT is especially designed for use with neutral, slightly aggressive, solid free liquids. The device is made up of a compact Inline sensor-fitting (Type S030/S030‑HT) and a transmitter (Type SE30/SE30‑HT). The device is quickly and easily assembled than | BURKERT 宝帝流体控制系统 | | ||
Specialty Pins 文件：173.18 Kbytes Page：1 Pages | HEYCO | | ||
Its a complete tool kit that fits in your palm. 文件：1.8415 Mbytes Page：16 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Radial Lead Thermal Cutoff 文件：57.59 Kbytes Page：1 Pages | NTE | | ||
TYPE N FEMALE TO TYPE N MALE RADIUS R/A ADAPTER 文件：122.81 Kbytes Page：1 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |
APT8030LVFR产品属性
- 类型
描述
- 型号
APT8030LVFR
- 制造商
ADPOW
- 制造商全称
Advanced Power Technology
- 功能描述
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MICROSEMI |
25+23+ |
TO-264 |
24444 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
APT |
2026+ |
TO-264 |
250 |
原装正品,欢迎来电咨询! |
|||
MICROSEMI/美高森美 |
25+ |
TO264 |
880000 |
明嘉莱只做原装正品现货 |
|||
APT |
22+ |
TO-3PL |
8000 |
原装正品支持实单 |
|||
MICROSEMI/美高森美 |
2025+ |
TO264 |
3000 |
原装进口价格优 请找坤融电子! |
|||
APT |
24+ |
8866 |
|||||
APT |
1932+ |
TO-264 |
213 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
APT |
22+ |
TO-264L |
8200 |
原装现货库存.价格优势!! |
|||
APT |
23+ |
TO-3PL |
5000 |
原装正品,假一罚十 |
|||
APT |
2447 |
TO39 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
APT8030LVFR规格书下载地址
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DdatasheetPDF页码索引
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