Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • T-MAX™ or TO-264 P

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Iden

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 49A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.11Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • T-MAX™ or TO-264 P

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 49A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.11Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Iden

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

文件：149.79 Kbytes Page：4 Pages

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

文件：149.79 Kbytes Page：4 Pages

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

文件：148.01 Kbytes Page：4 Pages

MOSFET

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

文件：148.01 Kbytes Page：4 Pages

N-Channel MOSFET

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

文件：149.79 Kbytes Page：4 Pages

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

文件：148.01 Kbytes Page：4 Pages

POWER MOS V 600V 49A 0.110 Ohm

Plunger valve 2/2 way direct-acting

Valve 6011 is a direct-acting plunger valve. The stopper and plunger guide tube are welded together to enhance pressure resistance and leak-tightness. Various seal material combinations are available depending on the application. A Bürkert-specific flange design (SFB) enables space-saving arran

PLUGS AND JACKS

[KEYSTONE]

TEST TIPS AND PLUGS

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MSD 6-Mod Controller for Carbureted and EFI Gen III Engines

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SINGLE POLE, SINGLE THROW DROP-IN/CONNECTORIZED SWITCH MODULES

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