Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Iden

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 49A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.11Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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Plunger valve 2/2 way direct-acting

Valve 6011 is a direct-acting plunger valve. The stopper and plunger guide tube are welded together to enhance pressure resistance and leak-tightness. Various seal material combinations are available depending on the application. A Bürkert-specific flange design (SFB) enables space-saving arran

PLUGS AND JACKS

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TEST TIPS AND PLUGS

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MSD 6-Mod Controller for Carbureted and EFI Gen III Engines

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SINGLE POLE, SINGLE THROW DROP-IN/CONNECTORIZED SWITCH MODULES

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