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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
APT30M85 | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast | ADPOW |   | |
APT30M85 | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. | ADPOW | | |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. | ADPOW | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast | ADPOW | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 40A@ TC=25℃ ·Drain Source Voltage : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.085Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC | ISC 无锡固电 | | ||
MOSFET ROHS | MICROCHIP 微芯科技 | | ||
POWER MOS V 300V 40A 0.085 Ohm | APT 晶科电子 | | ||
isc N-Channel MOSFET Transistor 文件：420.1 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Power Semiconductors Power Modules 文件：2.83336 Mbytes Page：44 Pages | MICROSEMI 美高森美 | |
APT30M85产品属性
- 类型
描述
- 型号
APT30M85
- 制造商
ADPOW
- 制造商全称
Advanced Power Technology
- 功能描述
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Microchip Technology / Atmel |
25+ |
TO-247-3 |
6895 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
Microchip Technology / Atmel |
25+ |
TO-247-3 |
6843 |
样件支持,可原厂排单订货! |
|||
APT |
20+ |
TO-247 |
22 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
APT |
20+ |
TO-247 |
35830 |
原装优势主营型号-可开原型号增税票 |
|||
APT |
22+ |
TO-247 |
8000 |
原装正品支持实单 |
|||
APT |
24+ |
8866 |
|||||
APT/MICROSEMI |
23+ |
TO-247 |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
APT |
22+ |
原厂原封 |
8200 |
原装现货库存.价格优势!! |
|||
APT |
19+ |
TO-247 |
28 |
全新 发货1-2天 |
|||
APT |
23+ |
TO-3P |
5000 |
原装正品,假一罚十 |
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APT30M85规格书下载地址
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DdatasheetPDF页码索引
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