位置：首页 > IC中文资料第4067页 > APT20M45BVRG
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
APT20M45BVRG | POWER MOS V짰 POWER MOS V® POWER MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increase packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. F | Microsemi 美高森美 |   | |
APT20M45BVRG | isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 56A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.045Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC | ISC 无锡固电 | | |
Power MOS V is a new generation of high voltage N-Channel enhancement Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body | ADPOW | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switchi | ADPOW | | ||
POWER MOS V짰 POWER MOS V® POWER MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increase packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. F | Microsemi 美高森美 | | ||
isc N-Channel MOSFET Transistor 文件：419.77 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor 文件：419.75 Kbytes Page：2 Pages | ISC 无锡固电 | |
APT20M45BVRG产品属性
- 类型
描述
- 型号
APT20M45BVRG
- 功能描述
MOSFET N-CH 200V 56A TO-247
- RoHS
是
- 类别
分离式半导体产品 >> FET - 单
- 系列
POWER MOS V®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MROSEMI/美高森美 |
24+ |
NA/ |
3031 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
MICROCHIP(美国微芯) |
24+ |
TO268 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
MICROSEMI |
21+ |
TO/247-3 |
3031 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
|||
MICROSEMI |
1825+ |
TO/247-3 |
3031 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
MICROSEMI |
1447 |
5 |
公司优势库存 热卖中! |
||||
MICROSEMI/美高森美 |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
MICROSEMI/美高森美 |
24+ |
TO/247-3 |
57000 |
只做全新原装进口现货 |
|||
MICROSEMI |
21+ |
TO/247-3 |
3031 |
原装现货假一赔十 |
|||
MICROSEMI/美高森美 |
21+ |
TO247-3 |
120000 |
长期代理优势供应 |
|||
MICROSEMI/美高森美 |
22+ |
TO247-3 |
3800 |
只做原装,价格优惠,长期供货。 |
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DdatasheetPDF页码索引
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