位置：首页 > IC中文资料第4067页 > APT20M45BVRG
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
APT20M45BVRG | POWERMOSV짰 POWERMOSV® POWERMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasepackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. F | MicrosemiMicrosemi Corporation 美高森美美高森美公司 |  |   |
APT20M45BVRG | iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=56A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.045Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
PowerMOSVisanewgenerationofhighvoltageN-Channelenhancement PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FastRecoveryBody | ADPOW Advanced Power Technology |  | | |
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitchi | ADPOW Advanced Power Technology | | | |
POWERMOSV짰 POWERMOSV® POWERMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasepackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. F | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
iscN-ChannelMOSFETTransistor 文件：419.77 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
iscN-ChannelMOSFETTransistor 文件：419.75 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | |
APT20M45BVRG产品属性
- 类型
描述
- 型号
APT20M45BVRG
- 功能描述
MOSFET N-CH 200V 56A TO-247
- RoHS
是
- 类别
分离式半导体产品 >> FET - 单
- 系列
POWER MOS V®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MROSEMI/美高森美 |
24+ |
NA/ |
3031 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
MICROSEMI |
1825+ |
TO/247-3 |
3031 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Microchip Technology |
24+ |
TO-247 [B] |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
MICROSEMI/美高森美 |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
ADPOW |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
|||
APT |
23+ |
TO-247B |
12300 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
MICROSEMI |
21+ |
TO/247-3 |
3031 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
|||
MICROSEMI |
21+ |
TO/247-3 |
3031 |
原装现货假一赔十 |
|||
MICROCHIP |
23+ |
7300 |
专注配单,只做原装进口现货 |
||||
MICROSEMI/美高森美 |
21+ |
TO247-3 |
7500 |
只做原装所有货源可以追溯原厂 |
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APT20M45BVRG规格书下载地址
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DdatasheetPDF页码索引
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