POWER MOS V짰

POWER MOS V® POWER MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increase packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. F

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switchi

isc N-Channel MOSFET Transistor

文件：419.75 Kbytes Page：2 Pages

POWER MOS V®

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 56A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.045Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

POWER MOS V짰

POWER MOS V® POWER MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increase packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. F

MOSFET

Power MOS V is a new generation of high voltage N-Channel enhancement

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body

isc N-Channel MOSFET Transistor

文件：419.77 Kbytes Page：2 Pages