2.0x1.25mm SMD CHIP LED LAMP

SUPER THIN SMD CHIP LED 2012 (0805) UNIT : MM(INCH) TOLERANCE : ±0.1 [±0.004] UNLESS OTHERWISE NOTED

2.0x1.25mm SMD CHIP LED LAMP

Description The Super Bright Orange device is made with DH InGaAlP (on GaAs substrate) light emitting diode chip. Features ● 2.0mmx1.25mm SMT LED,0.75mm THICKNESS. ● LOW POWER CONSUMPTION. ● WIDE VIEWING ANGLE. ● IDEAL FOR BACKLIGHT AND INDICATOR. ● VARIOUS COLORS AND LENS TYPES AVAILABLE.

2.0 x 1.25 mm SMD Chip LED Lamp

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发光二极管/LED

发光二极管/LED

封装/外壳：0805（2012 公制） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：LED RED CLEAR CHIP SMD 光电器件 LED 指示 - 分立

2.0 x 1.25 mm SMD Chip LED Lamp

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2.0 x 1.25 mm SMD Chip LED Lamp

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封装/外壳：0805（2012 公制） 包装：带盒（TB） 描述：LED ORANGE CLEAR CHIP SMD 光电器件 LED 指示 - 分立

发光二极管/LED

2.0 x 1.25 mm SMD Chip LED Lamp

文件：784.65 Kbytes Page：4 Pages

Low power consumption

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Low power consumption

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2.0 x 1.25 mm SMD Chip LED Lamp

文件：788.05 Kbytes Page：4 Pages

2.0 x 1.25 mm SMD Chip LED Lamp

文件：784.65 Kbytes Page：4 Pages

2.0 x 1.25 mm SMD Chip LED Lamp

文件：788.05 Kbytes Page：4 Pages

NPN DARLINGTON POWER MODULE

■ HIGH CURRENT POWER BIPOLAR MODULE ■ VERY LOW RthJUNCTION TO CASE ■ SPECIFIED ACCIDENTAL OVERLOAD AREAS ■ ULTRAFAST FREEWHEELING DIODE ■ FULLY INSULATED PACKAGE (UL COMPLIANT) ■ EASY TO MOUNT ■ LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS: ■ MOTOR CONTROL

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. PolyfetTMrocess features gold metal for greatly extended lifetim

Integrated Circuit 7-Channel Darlington Array/Driver

Description: The NTE2011 through NTE2015 are high–voltage, high–current Darlington arrays in a 16–Lead DIP type package and are comprised of seven silicon NPN Darlington pairs on a common monolithic sub strate. All units have open–collector outputs and integral diodes for inductive load transie

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

SCR FOR OVERVOLTAGE PROTECTION

DESCRIPTION The TYP 212 ---> 1012 Family uses high perform ance glass passivated chips technology. These Silicon Controlled Rectifiers are designed for overvoltage protection in crowbar circuits application. FEATURES .HIGH SURGE CURRENT CAPABILITY .HIGH dI/dt RATING .HIGH STABILIT