位置：首页 > IC中文资料第4067页 > APT1201R6SVFRG
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
APT1201R6SVFRG | FREDFETs | Microchip 微芯科技 |   | |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast | ADPOW | | ||
POWER MOS V FREDFET POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate lay | ADPOW | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.6Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co | ISC 无锡固电 | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast | ADPOW | | ||
POWER MOS V FREDFET POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate lay | ADPOW | |
APT1201R6SVFRG产品属性
- 类型
描述
- 型号
APT1201R6SVFRG
- 功能描述
MOSFET N-CH 1200V 8A D3PAK
- RoHS
是
- 类别
分离式半导体产品 >> FET - 单
- 系列
POWER MOS V®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
APT |
23+ |
TO |
8000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
APT |
22+ |
SOT227 |
8000 |
原装正品支持实单 |
|||
APT |
22+ |
模块 |
8200 |
原装现货库存.价格优势!! |
|||
Microsemi Corporation |
22+ |
SOT2274 miniBLOC |
9000 |
原厂渠道,现货配单 |
|||
APT |
2023+ |
MODULE |
663 |
主打螺丝模块系列 |
|||
APT |
24+/25+ |
70 |
原装正品现货库存价优 |
||||
APT |
25+ |
250 |
公司优势库存 热卖中!! |
||||
APT |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
APTMICROS |
13+ |
D3PAK |
40 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
MICROSEMI/美高森美 |
21+ |
D3PAK |
120000 |
长期代理优势供应 |
APT1201R6SVFRG芯片相关品牌
APT1201R6SVFRG规格书下载地址
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DdatasheetPDF页码索引
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