N-Channel Enhancement Mode MOSFET

Features • 30V/8A , RDS(ON)=15mΩ(typ.) @ VGS=10V RDS(ON)=23mΩ(typ.) @ VGS=4.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SO-8 Package Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered System

N-Channel Enhancement Mode MOSFET

Features • 30V/8A , RDS(ON)=15mΩ(typ.) @ VGS=10V RDS(ON)=23mΩ(typ.) @ VGS=4.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SO-8 Package Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered System

N-Channel Enhancement Mode MOSFET

Features • 30V/8A , RDS(ON)=15mΩ(typ.) @ VGS=10V RDS(ON)=23mΩ(typ.) @ VGS=4.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SO-8 Package Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered System

High Perform Instr, 1 Pr #16 Str TC, PVC Ins E2, PVC Jkt, PLTC

Product Description High Performance Instrumentation, 1 Pair 16AWG (19x29) Tinned Copper, PVC Insulation E2 Color Code, PVC Outer Jacket, PLTC

MACHINE SCREW PAN PHILLIPS 10-32

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Couplings

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6-32 BINDING HEAD SCREW

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