Bipolar Power Transistors

Bipolar Power Transistors NPN Silicon • Collector –Emitter Sustaining Voltage — VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE = 85 (Min) @ IC = 1.0 Adc = 60 (Min) @ IC = 3.0 Adc • Low Collector –Emitter Saturation Voltage — VCE(sat) = 0.2 Vdc (Max) @ IC =

Bipolar Power Transistors NPN Silicon

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Bipolar Power Transistors NPN Silicon

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封装/外壳：TO-261-4，TO-261AA 包装：散装 描述：TRANS NPN 30V 3A SOT223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-261-4，TO-261AA 包装：管件 描述：TRANS NPN 30V 3A SOT223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

High Perform Instr, 1 Pr #16 Str TC, PVC Ins E2, PVC Jkt, PLTC

Product Description High Performance Instrumentation, 1 Pair 16AWG (19x29) Tinned Copper, PVC Insulation E2 Color Code, PVC Outer Jacket, PLTC

Single N-Channel Enhancement Mode Field Effect Transistor

General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are particularly suited for low

MACHINE SCREW PAN PHILLIPS 10-32

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N-Channel 20V (D-S) MOSFET

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6-32 BINDING HEAD SCREW

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