N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltag

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 15A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.12Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description AP9997 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 packa

Simple Drive Requirement

Description AP9997 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 packa

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description AP9997 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 packa

Simple Drive Requirement

Description AP9997 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 packa

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The SOT-223 package is designed for suface mount application, larger heatsink than SO-8 and SOT package. ▼ Simple Drive Requirement ▼ Lo

N-Channel Enhancement Mode Power MOSFET

Application Load/Power Switching Interfacing Switching Logic Level Shift

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for commercial -industrial surface mount applications and suited for low v

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is widely preferred for commercial-industrial through-hole applications. ▼ Simple Drive Requ

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is widely preferred for commercial-industrial through-hole applications. ▼ Simple Drive Requ

Simple Drive Requirement

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Simple Drive Requirement

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Simple Drive Requirement

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N-Channel MOSFET uses advanced trench technology

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Simple Drive Requirement

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Power MOSFETs

N-Channel MOSFET uses advanced trench technology

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N-Channel 100 V (D-S) MOSFET

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Power MOSFETs

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N-Channel 100-V (D-S) MOSFET

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Power MOSFETs

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DeviceNet Power Supply Cable, 7/8 Power Single-Ended Cordset: Female straight, 3-pin(2PE), black body, 63 V, 12 A; PUR black cable, 1.00 mm²

Product Description 0905 203 301 - DeviceNet Power Supply Cable, 7/8 Power Single-Ended Cordset: Female straight, 3-pin(2+PE), black body, 63 V, 12 A; PUR black cable, 1.00 mm²

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description AP9997 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 packa

Simple Drive Requirement

Description AP9997 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 packa

Simple Drive Requirement

文件：105.93 Kbytes Page：5 Pages