| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
AP70N06 | 16Ampere Insulated Dual Common Anode Ultra Fast Recovery Rectifiers 文件:1.74385 Mbytes Page:2 Pages | THINKISEMI 思祁半导体 | ||
60V N-Channel Enhancement Mode MOSFET Features - VDS = 60V ID =70A - RDS(ON) | APME 永源微电子 | |||
60V N-Channel Enhancement Mode MOSFET Features - VDS = 60V ID =70A - RDS(ON) | APME 永源微电子 | |||
60V N-Channel Enhancement Mode MOSFET Features - VDS = 60V ID =70A - RDS(ON) | APME 永源微电子 | |||
60V N-Channel Enhancement Mode MOSFET Features - VDS = 60V ID =70A - RDS(ON) | APME 永源微电子 | |||
60V N-Channel Enhancement Mode MOSFET | APM | |||
MOSFET | APM | |||
25A, 60V, 0.025 Ohm, N-Channel Power MOSFET The RFK70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They are designed for use in applications such as switching | INTERSIL | |||
70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, s | FAIRCHILD 仙童半导体 | |||
70A, 60V, 0.014 Ohm, N-Channel Power MOSFET The RFK70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They are designed for use in applications such as switching | INTERSIL | |||
70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, s | FAIRCHILD 仙童半导体 | |||
70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, s | INTERSIL |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
APM |
21+ |
明嘉莱只做原装正品现货 |
2510000 |
TO-252-3L |
|||
APM |
23+ |
TO-252-3L |
280000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
26+ |
N/A |
58000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
APM |
2023+ |
TO-252-3L |
50000 |
AI智能識别、工業、汽車、醫療方案LPC批量及配套一站 |
AP70N06芯片相关品牌
AP70N06规格书下载地址
AP70N06参数引脚图相关
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AP70N06数据表相关新闻
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AP6901GSM-HF
2021-10-18AP6906GH-HF找代理商上深圳百域芯科技
AP6906GH-HF找代理商上深圳百域芯科技 AP85U03GH-HF AP9575AGH AP9575GM APM1403ASC-TRL APM2054NUC-TRL APM2301CAC-TRL APM2305AC APM2701AC APM2701ACC-TRG APM3048ADU4 APM3095PUC-TRL APM4015PUC-TRL APM4435KC-TRL APM4826KC-TRG APM4828KC-TRL BF1107 BS170FTA
2021-7-1AP6906GH-HF找代理商上深圳百域芯科技
AP6906GH-HF找代理商上深圳百域芯科技 制造商 Advanced Power Electronics Corp HIGH 5.8 风险等级 设计 制造 长期 芯片详细信息 Source Content uid: AP6906GH-HF Manufacturer Part Number: AP6906GH-HF Part Life Cycle Code: Contact Manufacturer Ihs Manufacturer: ADVANCED POWER
2021-7-1AP7335
AP7335,全新原装现货0755-82732291当天发货或门市自取. QQ:1755232575 /QQ:1157611585,微信号:87680558.
2021-2-11AP7335-18WG-7
AP7335-18WG-7,全新原装现货0755-82732291当天发货或门市自取. QQ:1755232575 /QQ:1157611585,微信号:87680558.
2021-2-11
DdatasheetPDF页码索引
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