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AP70N06

16Ampere Insulated Dual Common Anode Ultra Fast Recovery Rectifiers

文件:1.74385 Mbytes Page:2 Pages

THINKISEMI

思祁半导体

60V N-Channel Enhancement Mode MOSFET

Features - VDS = 60V ID =70A - RDS(ON)

APME

永源微电子

60V N-Channel Enhancement Mode MOSFET

Features - VDS = 60V ID =70A - RDS(ON)

APME

永源微电子

60V N-Channel Enhancement Mode MOSFET

Features - VDS = 60V ID =70A - RDS(ON)

APME

永源微电子

60V N-Channel Enhancement Mode MOSFET

Features - VDS = 60V ID =70A - RDS(ON)

APME

永源微电子

60V N-Channel Enhancement Mode MOSFET

APM

MOSFET

APM

25A, 60V, 0.025 Ohm, N-Channel Power MOSFET

The RFK70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They are designed for use in applications such as switching

INTERSIL

70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, s

FAIRCHILD

仙童半导体

70A, 60V, 0.014 Ohm, N-Channel Power MOSFET

The RFK70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They are designed for use in applications such as switching

INTERSIL

70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, s

FAIRCHILD

仙童半导体

70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, s

INTERSIL

更新时间:2026-5-24 17:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
APM
21+
明嘉莱只做原装正品现货
2510000
TO-252-3L
APM
23+
TO-252-3L
280000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
26+
N/A
58000
一级代理-主营优势-实惠价格-不悔选择
APM
2023+
TO-252-3L
50000
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