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丝印代码:AP40P03DF;-30V P-Channel Enhancement Mode MOSFET

文件:2.03001 Mbytes Page:5 Pages

LEIDITECH

雷卯电子

-30V P-Channel Enhancement Mode MOSFET

Features - VDS = -30V ID =-40A - RDS(ON)

APME

永源微电子

-30V P-Channel Enhancement Mode MOSFET

Features - VDS = -30V ID =-40A - RDS(ON)

APME

永源微电子

P-Channel 30-V (D-S) MOSFET

文件:1.02329 Mbytes Page:9 Pages

VBSEMI

微碧半导体

Power MOSFETs

APEC

富鼎先进

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件:63.47 Kbytes Page:4 Pages

A-POWER

富鼎先进电子

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件:274.77 Kbytes Page:4 Pages

A-POWER

富鼎先进电子

Fast Switching Characteristic

文件:224.59 Kbytes Page:6 Pages

A-POWER

富鼎先进电子

Fast Switching Characteristic

文件:57.14 Kbytes Page:5 Pages

A-POWER

富鼎先进电子

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件:39.69 Kbytes Page:4 Pages

A-POWER

富鼎先进电子

Power MOSFETs

APEC

富鼎先进

Lower On-resistance, Simple Drive Requirement

文件:107 Kbytes Page:4 Pages

A-POWER

富鼎先进电子

Simple Drive Requirement

文件:101.53 Kbytes Page:4 Pages

A-POWER

富鼎先进电子

Fast Switching Characteristic

文件:58.4 Kbytes Page:5 Pages

A-POWER

富鼎先进电子

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件:63.47 Kbytes Page:4 Pages

A-POWER

富鼎先进电子

N-Channel 30-V (D-S) MOSFET

文件:960.87 Kbytes Page:8 Pages

VBSEMI

微碧半导体

Lower Gate Charge Simple Drive Requirement

APEC

富鼎先进

Lower Gate Charge Simple Drive Requirement

文件:123.39 Kbytes Page:5 Pages

A-POWER

富鼎先进电子

Simple Drive Requirement

文件:123.39 Kbytes Page:5 Pages

A-POWER

富鼎先进电子

ULTRAFAST RECTIFIER PDP ENERGY RECOVERY

DESCRIPTION The STTH40P03S is an Ultrafast Recovery Power Rectifier dedicated to energy recovery in PDP application. The key parameters of the DERC diode for the energy recovery cicuit have been optimized in order to decrease power losses. FEATURES AND BENEFITS ■ Ultrafast recovery allo

STMICROELECTRONICS

意法半导体

ULTRAFAST RECTIFIER PDP ENERGY RECOVERY

DESCRIPTION The STTH40P03S is an Ultrafast Recovery Power Rectifier dedicated to energy recovery in PDP application. The key parameters of the DERC diode for the energy recovery cicuit have been optimized in order to decrease power losses. FEATURES AND BENEFITS ■ Ultrafast recovery allo

STMICROELECTRONICS

意法半导体

P-Channel Enhancement Mode Power MOSFET

文件:430.13 Kbytes Page:5 Pages

ANACHIP

易亨电子

P-Channel Enhancement Mode Power MOSFET

文件:430.13 Kbytes Page:5 Pages

ANACHIP

易亨电子

P-Channel Enhancement Mode Power MOSFET

文件:430.13 Kbytes Page:5 Pages

ANACHIP

易亨电子

AP40P03产品属性

  • 类型

    描述

  • Configuration:

    Single

  • Type:

    P

  • VDS (V):

    -30

  • VGS (±V):

    20

  • RDS(ON) (mΩ max)/10V:

    28

  • RDS(ON) (mΩ max)/4.5V:

    50

  • Ciss (pF):

    915/1465

  • Qg (nC):

    14/22

更新时间:2026-5-24 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TI
25+
WQFN-32(5x5)
22412
正规渠道,免费送样。支持账期,BOM一站式配齐
NS
22+
LLP
3000
原装正品,支持实单
TI/NS
24+
WQFN32
5000
全新原装正品,现货销售
TexasInstruments
18+
ICREGCTRLRBUCKPWMCM32-LL
6580
公司原装现货/欢迎来电咨询!
NS
22+
QFN-32
20000
公司只做原装 品质保证
WEIDMULLER
30
WEIDMULLER
24+
con
30
现货常备产品原装可到京北通宇商城查价格
TI
20+
NA
53650
TI原装主营-可开原型号增税票
NS
10+
QFN-32
941
一级代理,专注军工、汽车、医疗、工业、新能源、电力
NS
2023+
QFN
8800
正品渠道现货 终端可提供BOM表配单。

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