Power Mosfets

20V N-Channel Enhancement Mode MOSFET

AP2302BI采用先进的沟道技术，提供出色的RDS（ON），低栅极电荷和栅极电压低至1.8V的操作。该器件适用于负载开关或PWM应用。一般特性高功率，和电流处理能力，无铅产品SOT23小体积封装 VDS = 20V，ID = 2.3A \nRDS（ON）<65m\nΩ@ V GS = -2.5V RDS（ON）<85m\nΩ@ V GS = -4.5V 高功率和电流处理能力\n无铅产品\nSOT23小体积封装;

20V N-Channel Enhancement Mode MOSFET

Features - VDS = 20V ID =3.2A - RDS(ON)

8-bit 50MSPS Video A/D Converter with Clamp Function

Description The CXD2302Q is an 8-bit CMOS A/D converter for video with synchronizing clamp function. The adoption of 2 step-parallel method achieves low power consumption and a maximum conversion rate of 50MSPS. Features • Resolution: 8 bit ± 1/2LSB (DL) • Maximum sampling frequency: 50MSPS •

Silicon NPN Transistor Color TV Horizontal Deflection Output w/Damper Diode

Features: • High Breakdown Voltage and High Reliability • High Switching Speed • Capable of Being Mounted in a Variety of Methods

BROADBAND LINEAR VARIABLE GAIN AMPLIFIER

Product Description The RF2302 is a broadband linear variable gain amplifier that was designed specifically for digital communications systems that require linear amplification over a wide gain control range. It is suitable for use in CDMA or TDMA systems in the cellular or PCS band, in DAMPS sys

BROADBAND LINEAR VARIABLE GAIN AMPLIFIER

Product Description The RF2302 is a broadband linear variable gain amplifier that was designed specifically for digital communications systems that require linear amplification over a wide gain control range. It is suitable for use in CDMA or TDMA systems in the cellular or PCS band, in DAMPS sys

N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: SI2302DS in SOT23. Features TrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package.