AP2114价格

参考价格:¥0.5385

型号:AP2114H-1.2TRG1 品牌:Diodes 备注:这里有AP2114多少钱,2025年最近7天走势,今日出价,今日竞价,AP2114批发/采购报价,AP2114行情走势销售排行榜,AP2114报价。
型号 功能描述 生产厂家&企业 LOGO 操作
AP2114

1ALOWNOISECMOSLDOREGULATORWITHENABLE

Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V

DIODESDiodes Incorporated

美台半导体

DIODES
AP2114

1ALOWNOISECMOSLDOREGULATORWITHENABLE

文件:787.94 Kbytes Page:28 Pages

BCDSEMIBCD Semiconductor Manufacturing Limited

新进半导体上海新进半导体制造有限公司

BCDSEMI

1ALOWNOISECMOSLDOREGULATORWITHENABLE

Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V

DIODESDiodes Incorporated

美台半导体

DIODES

1ALOWNOISECMOSLDOREGULATORWITHENABLE

Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V

DIODESDiodes Incorporated

美台半导体

DIODES

1ALOWNOISECMOSLDOREGULATORWITHENABLE

Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V

DIODESDiodes Incorporated

美台半导体

DIODES

1ALOWNOISECMOSLDOREGULATORWITHENABLE

Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V

DIODESDiodes Incorporated

美台半导体

DIODES

1ALOWNOISECMOSLDOREGULATORWITHENABLE

Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V

DIODESDiodes Incorporated

美台半导体

DIODES

1ALOWNOISECMOSLDOREGULATORWITHENABLE

Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V

DIODESDiodes Incorporated

美台半导体

DIODES

1ALOWNOISECMOSLDOREGULATORWITHENABLE

Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V

DIODESDiodes Incorporated

美台半导体

DIODES

1ALOWNOISECMOSLDOREGULATORWITHENABLE

Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V

DIODESDiodes Incorporated

美台半导体

DIODES

1ALOWNOISECMOSLDOREGULATORWITHENABLE

Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V

DIODESDiodes Incorporated

美台半导体

DIODES

1ALOWNOISECMOSLDOREGULATORWITHENABLE

Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V

DIODESDiodes Incorporated

美台半导体

DIODES

1ALOWNOISECMOSLDOREGULATORWITHENABLE

Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V

DIODESDiodes Incorporated

美台半导体

DIODES

1ALOWNOISECMOSLDOREGULATORWITHENABLE

Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V

DIODESDiodes Incorporated

美台半导体

DIODES

1ALOWNOISECMOSLDOREGULATORWITHENABLE

Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V

DIODESDiodes Incorporated

美台半导体

DIODES

1ALOWNOISECMOSLDOREGULATORWITHENABLE

Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V

DIODESDiodes Incorporated

美台半导体

DIODES

1ALOWNOISECMOSLDOREGULATORWITHENABLE

Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V

DIODESDiodes Incorporated

美台半导体

DIODES

1ALOWNOISECMOSLDOREGULATORWITHENABLE

Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V

DIODESDiodes Incorporated

美台半导体

DIODES

1ALOWNOISECMOSLDOREGULATORWITHENABLE

Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V

DIODESDiodes Incorporated

美台半导体

DIODES

1ALOWNOISECMOSLDOREGULATORWITHENABLE

Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V

DIODESDiodes Incorporated

美台半导体

DIODES

1ALOWNOISECMOSLDOREGULATORWITHENABLE

Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V

DIODESDiodes Incorporated

美台半导体

DIODES

1ALOWNOISECMOSLDOREGULATORWITHENABLE

Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V

DIODESDiodes Incorporated

美台半导体

DIODES

1ALOWNOISECMOSLDOREGULATORWITHENABLE

Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V

DIODESDiodes Incorporated

美台半导体

DIODES

1ALOWNOISECMOSLDOREGULATORWITHENABLE

Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V

DIODESDiodes Incorporated

美台半导体

DIODES

1ALOWNOISECMOSLDOREGULATORWITHENABLE

Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V

DIODESDiodes Incorporated

美台半导体

DIODES

1ALOWNOISECMOSLDOREGULATORWITHENABLE

Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V

DIODESDiodes Incorporated

美台半导体

DIODES

1ALOWNOISECMOSLDOREGULATORWITHENABLE

Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V

DIODESDiodes Incorporated

美台半导体

DIODES

1ALOWNOISECMOSLDOREGULATORWITHENABLE

Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V

DIODESDiodes Incorporated

美台半导体

DIODES

1ALOWNOISECMOSLDOREGULATORWITHENABLE

Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V

DIODESDiodes Incorporated

美台半导体

DIODES

1ALOWNOISECMOSLDOREGULATORWITHENABLE

Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V

DIODESDiodes Incorporated

美台半导体

DIODES

1ALOWNOISECMOSLDOREGULATORWITHENABLE

Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V

DIODESDiodes Incorporated

美台半导体

DIODES

1ALOWNOISECMOSLDOREGULATORWITHENABLE

Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V

DIODESDiodes Incorporated

美台半导体

DIODES

1ALOWNOISECMOSLDOREGULATORWITHENABLE

Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V

DIODESDiodes Incorporated

美台半导体

DIODES

1ALOWNOISECMOSLDOREGULATORWITHENABLE

Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V

DIODESDiodes Incorporated

美台半导体

DIODES

1ALOWNOISECMOSLDOREGULATORWITHENABLE

Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V

DIODESDiodes Incorporated

美台半导体

DIODES

1ALOWNOISECMOSLDOREGULATORWITHENABLE

Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V

DIODESDiodes Incorporated

美台半导体

DIODES

1ALOWNOISECMOSLDOREGULATORWITHENABLE

Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V

DIODESDiodes Incorporated

美台半导体

DIODES

1ALOWNOISECMOSLDOREGULATORWITHENABLE

Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V

DIODESDiodes Incorporated

美台半导体

DIODES

1ALOWNOISECMOSLDOREGULATORWITHENABLE

Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V

DIODESDiodes Incorporated

美台半导体

DIODES

1ALOWNOISECMOSLDOREGULATORWITHENABLE

Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V

DIODESDiodes Incorporated

美台半导体

DIODES

1ALOWNOISECMOSLDOREGULATORWITHENABLE

Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V

DIODESDiodes Incorporated

美台半导体

DIODES

1ALOWNOISECMOSLDOREGULATORWITHENABLE

文件:914.74 Kbytes Page:33 Pages

BCDSEMIBCD Semiconductor Manufacturing Limited

新进半导体上海新进半导体制造有限公司

BCDSEMI

1ALOWNOISECMOSLDOREGULATORWITHENABLE

文件:787.94 Kbytes Page:28 Pages

BCDSEMIBCD Semiconductor Manufacturing Limited

新进半导体上海新进半导体制造有限公司

BCDSEMI

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:卷带(TR) 描述:IC REG LINEAR 1.2V 1A TO252-2 集成电路(IC) 线性 + 开关稳压器

PAMDiodes Incorporated

龙鼎微龙鼎微电子(上海)有限公司

PAM

1ALOWNOISECMOSLDOREGULATORWITHENABLE

文件:914.74 Kbytes Page:33 Pages

BCDSEMIBCD Semiconductor Manufacturing Limited

新进半导体上海新进半导体制造有限公司

BCDSEMI

1ALOWNOISECMOSLDOREGULATORWITHENABLE

文件:914.74 Kbytes Page:33 Pages

BCDSEMIBCD Semiconductor Manufacturing Limited

新进半导体上海新进半导体制造有限公司

BCDSEMI

1ALOWNOISECMOSLDOREGULATORWITHENABLE

文件:914.74 Kbytes Page:33 Pages

BCDSEMIBCD Semiconductor Manufacturing Limited

新进半导体上海新进半导体制造有限公司

BCDSEMI

1ALOWNOISECMOSLDOREGULATORWITHENABLE

文件:787.94 Kbytes Page:28 Pages

BCDSEMIBCD Semiconductor Manufacturing Limited

新进半导体上海新进半导体制造有限公司

BCDSEMI

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:卷带(TR) 描述:IC REG LINEAR 1.8V 1A TO252-2 集成电路(IC) 稳压器 - 线性

PAMDiodes Incorporated

龙鼎微龙鼎微电子(上海)有限公司

PAM

1ALOWNOISECMOSLDOREGULATORWITHENABLE

文件:787.94 Kbytes Page:28 Pages

BCDSEMIBCD Semiconductor Manufacturing Limited

新进半导体上海新进半导体制造有限公司

BCDSEMI

1ALOWNOISECMOSLDOREGULATORWITHENABLE

文件:914.74 Kbytes Page:33 Pages

BCDSEMIBCD Semiconductor Manufacturing Limited

新进半导体上海新进半导体制造有限公司

BCDSEMI

1ALOWNOISECMOSLDOREGULATORWITHENABLE

文件:914.74 Kbytes Page:33 Pages

BCDSEMIBCD Semiconductor Manufacturing Limited

新进半导体上海新进半导体制造有限公司

BCDSEMI

1ALOWNOISECMOSLDOREGULATORWITHENABLE

文件:787.94 Kbytes Page:28 Pages

BCDSEMIBCD Semiconductor Manufacturing Limited

新进半导体上海新进半导体制造有限公司

BCDSEMI

1ALOWNOISECMOSLDOREGULATORWITHENABLE

文件:914.74 Kbytes Page:33 Pages

BCDSEMIBCD Semiconductor Manufacturing Limited

新进半导体上海新进半导体制造有限公司

BCDSEMI

1ALOWNOISECMOSLDOREGULATORWITHENABLE

文件:914.74 Kbytes Page:33 Pages

BCDSEMIBCD Semiconductor Manufacturing Limited

新进半导体上海新进半导体制造有限公司

BCDSEMI

1ALOWNOISECMOSLDOREGULATORWITHENABLE

文件:914.74 Kbytes Page:33 Pages

BCDSEMIBCD Semiconductor Manufacturing Limited

新进半导体上海新进半导体制造有限公司

BCDSEMI

1ALOWNOISECMOSLDOREGULATORWITHENABLE

文件:914.74 Kbytes Page:33 Pages

BCDSEMIBCD Semiconductor Manufacturing Limited

新进半导体上海新进半导体制造有限公司

BCDSEMI

1ALOWNOISECMOSLDOREGULATORWITHENABLE

文件:914.74 Kbytes Page:33 Pages

BCDSEMIBCD Semiconductor Manufacturing Limited

新进半导体上海新进半导体制造有限公司

BCDSEMI

1ALOWNOISECMOSLDOREGULATORWITHENABLE

文件:914.74 Kbytes Page:33 Pages

BCDSEMIBCD Semiconductor Manufacturing Limited

新进半导体上海新进半导体制造有限公司

BCDSEMI

1ALOWNOISECMOSLDOREGULATORWITHENABLE

文件:787.94 Kbytes Page:28 Pages

BCDSEMIBCD Semiconductor Manufacturing Limited

新进半导体上海新进半导体制造有限公司

BCDSEMI

AP2114产品属性

  • 类型

    描述

  • 型号

    AP2114

  • 制造商

    Diodes Incorporated

  • 功能描述

    LDO CMOS HICURR TO252-2 T&R 2.5K - Tape and Reel

  • 制造商

    Diodes Incorporated

  • 功能描述

    IC REG LDO 1.2V 1A TO252-2

更新时间:2025-8-4 11:27:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODES(美台)
NA
4666
全新原装正品现货可开票
BCD
21+
TO-252
23081
原装现货假一赔十
DIODES
23+
SOT-223
12000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
DIODES/美台
22+23+
TO-252
8000
新到现货,只做原装进口
DIODES/美台
24+
SOT223
29985
只做原厂渠道 可追溯货源
DIODES(美台)
24+
N/A
12980
原装正品现货支持实单
DIODES达尔
25+
SOIC-8
918000
明嘉莱只做原装正品现货
BCD
23+
TO-252
7300
专注配单,只做原装进口现货
BCD
2447
TO-252
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
DIODES/美台
23+
TO252
50000
全新原装正品现货,支持订货

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