型号 功能描述 生产厂家 企业 LOGO 操作
AP2012SURC

2.0x1.25mm SMD CHIP LED LAMP

Description The Hyper Red source color devices are made with DH InGaAlP on GaAs substrate Light Emitting Diode. Features ● 2.0mmx1.25mm SMT LED,1.1mm THICKNESS. ● LOW POWER CONSUMPTION. ● WIDE VIEWING ANGLE. ● IDEAL FOR BACKLIGHT AND INDICATOR. ● VARIOUS COLORS AND LENS TYPES AVAILABLE. ●

KINGBRIGHT

今台电子

2.0x1.25mm SMD CHIP LED LAMP

Description The Hyper Red source color devices are made with DH InGaAlP on GaAs substrate Light Emitting Diode. Features ● 2.0mmx1.25mm SMT LED,1.1mm THICKNESS. ● LOW POWER CONSUMPTION. ● WIDE VIEWING ANGLE. ● IDEAL FOR BACKLIGHT AND INDICATOR. ● VARIOUS COLORS AND LENS TYPES AVAILABLE. ●

KINGBRIGHT

今台电子

NPN DARLINGTON POWER MODULE

■ HIGH CURRENT POWER BIPOLAR MODULE ■ VERY LOW RthJUNCTION TO CASE ■ SPECIFIED ACCIDENTAL OVERLOAD AREAS ■ ULTRAFAST FREEWHEELING DIODE ■ FULLY INSULATED PACKAGE (UL COMPLIANT) ■ EASY TO MOUNT ■ LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS: ■ MOTOR CONTROL

STMICROELECTRONICS

意法半导体

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. PolyfetTMrocess features gold metal for greatly extended lifetim

POLYFET

Integrated Circuit 7-Channel Darlington Array/Driver

Description: The NTE2011 through NTE2015 are high–voltage, high–current Darlington arrays in a 16–Lead DIP type package and are comprised of seven silicon NPN Darlington pairs on a common monolithic sub strate. All units have open–collector outputs and integral diodes for inductive load transie

NTE

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

TECCOR

SCR FOR OVERVOLTAGE PROTECTION

DESCRIPTION The TYP 212 ---> 1012 Family uses high perform ance glass passivated chips technology. These Silicon Controlled Rectifiers are designed for overvoltage protection in crowbar circuits application. FEATURES .HIGH SURGE CURRENT CAPABILITY .HIGH dI/dt RATING .HIGH STABILIT

STMICROELECTRONICS

意法半导体

AP2012SURC产品属性

  • 类型

    描述

  • 型号

    AP2012SURC

  • 制造商

    Kingbright Corporation

  • 功能描述

    LED Uni-Color Red 640nm 2-Pin Chip LED T/R

更新时间:2026-3-15 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
KINGBRINGHT
24+
SMT
21680
公司现货库存 支持实单
KINGBRINGHT
2026+
SMT
27872
原装正品,欢迎来电咨询!
DIODES
25+23+
SOP-8
30791
绝对原装正品全新进口深圳现货
KINGBRIGHT
21+
SMDSMT
880000
明嘉莱只做原装正品现货
ATC
25+
DIP-8
3200
全新原装、诚信经营、公司现货销售!
KINGBRIGHT
22+
原厂原封
8200
原装现货库存.价格优势!!
KINGBRIGHT
22+
SMD
20000
公司只做原装 品质保障
AP
2447
SOP8
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
kingbright
20+
LED
83000
LED原装优势主营型号-可开原型号增税票
KINGBRIGHT
2019
1000
一级代理,专注军工、汽车、医疗、工业、新能源、电力

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  • AP2004-PWM降压控制器

    特点 - PWM降压控制电路 - 工作电压可高达至27V - 欠压锁定(UVLO)保护 - 短路保护(SCP) - 软启动电路 - 可变振荡器频率 - 300KHz时最大 - 1.25V参考电压输出 - 8引脚PDIP和​​SOP封装 应用 - 背光逆变器 - 液晶显示器 - XDROM,XDSL产品 - 直流/直流转换器,电脑等 AP2004集成脉

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  • AP2002-同步PWM控制器

    特点 - 单或双电源应用 - 0.8V+1.0%的参考电压。 - 快速瞬态响应。 - 同步运行的高效率(95%) - 片上电源良好,过电压保护。 - 体积小,具有最少的外部元件 - 软启动和启用功能 - 工业级温度范围 - 欠压锁定功能 - SOP- 14L封装 应用 - 微处理器核心供电 - 低成本的同步应用 - 电压调节模块(VRM) - 解除武装,复员和重返社会终止用

    2012-12-4
  • AP2001-单片双通道PWM控制器

    特点 - 双PWM控制电路 - 工作电压可高达至50V - 可调节死区时间控制(DTC) - 欠压锁定(UVLO)保护 - 短路保护(SCP) - 可变振荡器频率...... 500KHz的最大 - 2.5V参考电压输出 - 16引脚PDIP和​​SOP封装 AP2001集成脉宽调制(PWM)到一个单一芯片的控制电路,主要电源稳压器的设计。所有的功能包括一个片上2.5V参考输出,两个误差放大器,可调振荡器,两个死区时间比较器,欠压

    2012-12-4