AP10晶体管资料
AP1000别名：AP1000三极管、AP1000晶体管、AP1000晶体三极管
AP1000生产厂家：美国API电子公司
AP1000制作材料：Si-PNP
AP1000性质：低频或音频放大 （LF）_功率放大 （L）
AP1000封装形式：直插封装
AP1000极限工作电压：450V
AP1000最大电流允许值：15A
AP1000最大工作频率：25MHZ
AP1000引脚数：2
AP1000最大耗散功率：
AP1000放大倍数：
AP1000图片代号：E-44
AP1000vtest：450
AP1000htest：25000000
- AP1000atest：15
AP1000wtest：0
AP1000代换 AP1000用什么型号代替：
AP10价格
参考价格：￥1283.2777
型号：AP1020 品牌：Carlo 备注：这里有AP10多少钱，2026年最近7天走势，今日出价，今日竞价，AP10批发/采购报价，AP10行情走势销售排行榜，AP10报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
AP10 | Introduction to Knowles Precision Devices Applications RF amplifier LC Filters and Networks Broadband Wireless LAN Medical Devices Cordless and Cellular phones DR/Crystal Oscillator Microstrip line filters | KNOWLES 楼氏电子 |   | |
AP10 | AP10 VaiNet Wireless Access Point Features • One AP10 supports up to 32 VaiNet data loggers • Powered by Power over Ethernet (PoE) or DC adapter • Minimal infrastructure and no signal amplifiers needed • Uses HTTPS communication and encryption to ensure secure data transmission • Chirp spread spectrum wireless modulatio | VAISALA 维萨拉 | | |
AP10 | 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：CAP TRIMMER 1-10PF 250V TH 电容器 微调器，可变电容器 | ETC 知名厂家 | ETC | |
AP10 | 可调电容 | KNOWLES 楼氏电子 | | |
丝印代码：AP100P02D；-20V P-Channel Enhancement Mode MOSFET Features - VDS = -20V ID =-100A - RDS(ON) | APME 永源微电子 | | ||
丝印代码：AP100P02NF；-20V P-Channel Enhancement Mode MOSFET Features - VDS = -20V ID =-100 A - RDS(ON) | APME 永源微电子 | | ||
丝印代码：AP100P03D；-30V P-Channel Enhancement Mode MOSFET Features - VDS = -30V ID =-100A - RDS(ON) | APME 永源微电子 | | ||
丝印代码：AP100P03P；-30V P-Channel Enhancement Mode MOSFET Features - VDS = -30V ID =-100A - RDS(ON) | APME 永源微电子 | | ||
丝印代码：AP100P03T；-30V P-Channel Enhancement Mode MOSFET Features - VDS = -30V ID =-100A - RDS(ON) | APME 永源微电子 | | ||
丝印代码：AP100P04NF；-40V P-Channel Enhancement Mode MOSFET Features - VDS = -40V ID =-100 A - RDS(ON) | APME 永源微电子 | | ||
丝印代码：AP100P06D；-60V P-Channel Enhancement Mode MOSFET Features - VDS = -60V ID =-100A - RDS(ON) | APME 永源微电子 | | ||
丝印代码：AP100P06NF；-60V P-Channel Enhancement Mode MOSFET Features - VDS = -60V ID =-100A - RDS(ON) | APME 永源微电子 | | ||
丝印代码：AP100P06P；-60V P-Channel Enhancement Mode MOSFET Features - VDS = -60V ID =-100A - RDS(ON) | APME 永源微电子 | | ||
丝印代码：AP100P06T；-60V P-Channel Enhancement Mode MOSFET Features - VDS = -60V ID =-100A - RDS(ON) | APME 永源微电子 | | ||
丝印代码：AP100P08P；-80V P-Channel Enhancement Mode MOSFET Features - VDS = -80V ID =-100A - RDS(ON) | APME 永源微电子 | | ||
丝印代码：AP100P08NF；-80V P-Channel Enhancement Mode MOSFET Features - VDS = -80V ID =-100A - RDS(ON) | APME 永源微电子 | | ||
丝印代码：AP100P08P；-80V P-Channel Enhancement Mode MOSFET Features - VDS = -80V ID =-100A - RDS(ON) | APME 永源微电子 | | ||
丝印代码：AP100P08T；-80V P-Channel Enhancement Mode MOSFET Features - VDS = -80V ID =-100A - RDS(ON) | APME 永源微电子 | | ||
丝印代码：AP10G02LI；20V NP-Channel Enhancement Mode MOSFET Features - VDS = 20V ID =12A - RDS(ON) | APME 永源微电子 | | ||
丝印代码：AP10G02S；20V NP-Channel Enhancement Mode MOSFET Features - VDS = 20V ID =12A - RDS(ON) | APME 永源微电子 | | ||
丝印代码：AP10G03S；30V NP-Channel Enhancement Mode MOSFET Features - VDS = 30V ID =12 A - RDS(ON) | APME 永源微电子 | | ||
丝印代码：AP10G04DF；40V NP-Channel Enhancement Mode MOSFET Features - VDS = 40V ID =9.8A - RDS(ON) | APME 永源微电子 | | ||
丝印代码：AP10G04S；40V NP-Channel Enhancement Mode MOSFET Features - VDS = 40V ID =9.8A - RDS(ON) | APME 永源微电子 | | ||
丝印代码：AP10G06NF；60V NP-Channel Enhancement Mode MOSFET Features - VDS = 60V ID =10A - RDS(ON) | APME 永源微电子 | | ||
丝印代码：AP10G06S；60V NP-Channel Enhancement Mode MOSFET Features - VDS = 60V ID =12.5A - RDS(ON) | APME 永源微电子 | | ||
丝印代码：AP10H03S；30V NN-Channel Enhancement Mode MOSFET Features - VDS = 30V ID =10A - RDS(ON) | APME 永源微电子 | | ||
丝印代码：AP10H04S；40V NN-Channel Enhancement Mode MOSFET Features - VDS = 40V ID =10A - RDS(ON) | APME 永源微电子 | | ||
丝印代码：AP10H10S；100V NN-Channel Enhancement Mode MOSFET Features - VDS = 100V ID =12A - RDS(ON) | APME 永源微电子 | | ||
丝印代码：AP10N03LI；30V N-Channel Enhancement Mode MOSFET Features - VDS = 30V ID =10A - RDS(ON) | APME 永源微电子 | | ||
丝印代码：AP10N03SI；30V N-Channel Enhancement Mode MOSFET Features - VDS = 30V ID =10A - RDS(ON) | APME 永源微电子 | | ||
丝印代码：AP10N04MSI；40V N-Channel Enhancement Mode MOSFET Features - VDS =40V ID =10A - RDS(ON) | APME 永源微电子 | | ||
丝印代码：AP10N04S；40V N-Channel Enhancement Mode MOSFET Features - VDS =40V ID =10A - RDS(ON) | APME 永源微电子 | | ||
丝印代码：AP10N06BF；60V N-Channel Enhancement Mode MOSFET Features - VDS =60V ID =10A - RDS(ON) | APME 永源微电子 | | ||
丝印代码：AP10N06D；60V N-Channel Enhancement Mode MOSFET Features - VDS = 60V ID =13A - RDS(ON) | APME 永源微电子 | | ||
丝印代码：AP10N06MSI；60V N-Channel Enhancement Mode MOSFET Features - VDS = 60V ID =10A - RDS(ON) | APME 永源微电子 | | ||
丝印代码：AP10N06S；60V N-Channel Enhancement Mode MOSFET Features - VDS = 60V ID =10A - RDS(ON) | APME 永源微电子 | | ||
丝印代码：AP10N10DF；100V N-Channel Enhancement Mode MOSFET Features - VDS = 100V ID =10A - RDS(ON) | APME 永源微电子 | | ||
丝印代码：AP10N10S；100V N-Channel Enhancement Mode MOSFET Features - VDS = 100V ID =12.3A - RDS(ON) | APME 永源微电子 | | ||
丝印代码：AP10N2D；100V N-Channel Enhancement Mode MOSFET Features - VDS = 120V ID =10A - RDS(ON) | APME 永源微电子 | | ||
丝印代码：AP10N15D；150V N-Channel Enhancement Mode MOSFET Features - VDS = 150V ID =10A - RDS(ON) | APME 永源微电子 | | ||
丝印代码：AP10N15SI；150V N-Channel Enhancement Mode MOSFET Features - VDS = 150V ID =10A - RDS(ON) | APME 永源微电子 | | ||
丝印代码：AP10N15Y；150V N-Channel Enhancement Mode MOSFET Features - VDS = 150V ID =10A - RDS(ON) | APME 永源微电子 | | ||
丝印代码：AP10N25D；250V N-Channel Enhancement Mode MOSFET Features - VDS = 250V ID =10A - RDS(ON) | APME 永源微电子 | | ||
丝印代码：AP10N50F-B；500V N-Channel Enhancement Mode MOSFET Features - VDS = 500V ID =10A - RDS(ON) | APME 永源微电子 | | ||
丝印代码：AP10N50P-B；500V N-Channel Enhancement Mode MOSFET Features - VDS = 500V ID =10A - RDS(ON) | APME 永源微电子 | | ||
丝印代码：AP10N50T-B；500V N-Channel Enhancement Mode MOSFET Features - VDS = 500V ID =10A - RDS(ON) | APME 永源微电子 | | ||
丝印代码：AP10N70F；700V N-Channel Enhancement Mode MOSFET Features - VDS = 700V ID =10A - RDS(ON) | APME 永源微电子 | | ||
丝印代码：AP10N70P；700V N-Channel Enhancement Mode MOSFET Features - VDS = 700V ID =10A - RDS(ON) | APME 永源微电子 | | ||
丝印代码：AP10N80F；800V N-Channel Enhancement Mode MOSFET Features - VDS = 800V ID =10A - RDS(ON) | APME 永源微电子 | | ||
丝印代码：AP10N80P；800V N-Channel Enhancement Mode MOSFET Features - VDS = 800V ID =10A - RDS(ON) | APME 永源微电子 | | ||
丝印代码：AP10N80T；800V N-Channel Enhancement Mode MOSFET Features - VDS = 800V ID =10A - RDS(ON) | APME 永源微电子 | | ||
丝印代码：AP10N06D；60V N-Channel Enhancement Mode MOSFET 文件：1.90426 Mbytes Page：5 Pages | LEIDITECH 雷卯电子 | | ||
丝印代码：AP10N65F；650V N-Channel Enhancement Mode MOSFET 文件：5.45133 Mbytes Page：5 Pages | LEIDITECH 雷卯电子 | | ||
SILICON PIN DIODE DESCRIPTION: The AP1000A is a Diffused Epitaxial Silicon PIN Diode. | ASI | | ||
SILICON PIN DIODE CHIP DESCRIPTION: The AP1000B-00 is a Planar Silicon PIN Diode Chip Designed for High Speed Switch and Limiter Applications Up to 18 GHz. FEATURES INCLUDE: • Low Capacitance - 0.10 pF Typical • Fast Switching - 10 nS Typical • SiO2 Passivation | ASI | | ||
SILICON PIN DIODE DESCRIPTION: The AP1000C-11 is a Passivated Epitaxial Silicon PIN Diode Housed in a Hermetically Sealed Glass Package. This Device Iis Designed to Cover a Wide Range of Control Applications Such as RF Switching, Phase Shifting, Modulation, Duplexing Limiting and Pulse Forming. | ASI | | ||
Lead-Free Package, Low Conductance Loss Description The AP1001BSQ used the latest APEC Power MOSFET silicon technology with the advanced technology packaging to provide the lowest on-resistance loss, low profile and dual sided cooling compatible. The GreenFETTM package is compatible with existing soldering techniques and is ideal for | A-POWER 富鼎先进电子 | | ||
SMD Type Amber Emitter Features Top view 0402 package Viewing Angle = 60 Compatible with infrared and vapor phase reflow solder process High reliability Ultra bright Amber RoHS compliance Applications Optical indicator. Switch and Symbol Display. Description The AP100505-ATC3 is an AIlnGa | CTMICRO | | ||
AC Current transducer AP-B10 AC Current transducer AP-B10 Split core transducer for the electronic measurement AC waveforms current, with galvanic isolation between the primary (High power) and the secondary circuits (Electronic circuit). Switch selectable ranges and RMS 0-5V and 0-10V switch selectable voltage output. Feat | LEM 莱姆 | | ||
AC Current transducer AP-B420L AC Current transducer AP-B420L Split core transducer for the electronic measurement AC waveforms current, with galvanic isolation between the primary (High power) and the secondary circuits (Electronic circuit). Switch selectable ranges and RMS 4-20mA current output. Features • RMS output • Sp | LEM 莱姆 | |
AP10产品属性
- 类型
描述
- 额定电压(Vdc)：
250V
- Q值：
5000@100MHz
- 工作温度：
-65℃~+125℃
- 电容体高：
12.7mm
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ATC |
24+ |
TO-220 |
42387 |
免费送样,账期支持,原厂直供,没有中间商赚差价 |
|||
DIODES/美台 |
25+ |
TO-252 |
45000 |
DIODES/美台全新现货AP1084DG/DL-13即刻询购立享优惠#长期有排单订 |
|||
DIODES/美台 |
TO-263 |
23+ |
6000 |
原装现货有上库存就有货全网最低假一赔万 |
|||
富鼎MOS管 |
25+ |
TOLL |
18000 |
原厂授权一级代理，专注军工、汽车、医疗、工业、新能源、电力！ |
|||
DIODES |
19+ |
TO-263-2 |
12470 |
||||
APEC |
22+ |
SMD |
9000 |
||||
API |
25+ |
BGA |
20000 |
原装 |
|||
DIODES |
1313+ |
TO-263 |
95 |
现货库存,有单来谈 |
AP10规格书下载地址
AP10参数引脚图相关
- bc01
- ba028
- b533
- avr单片机
- avl
- avb
- atmega8
- atmega16
- atmega
- at91sam9263
- at91sam9261
- at89s52
- at89s51
- at89c52
- at89c51
- at89c2051
- as3410
- arm应用
- arm内核
- arm11
- AP1050
- AP105
- AP1045A
- AP1040
- AP1037
- AP1035
- AP1034
- AP1025
- AP1023
- AP1021
- AP1019
- AP1018
- AP1017
- AP1016
- AP1015
- AP1014
- AP1013
- AP1012A
- AP1012
- AP1011
- AP1010
- AP101
- AP1009
- AP1008
- AP1007
- AP1006
- AP1005
- AP1004
- AP1003
- AP1002
- AP1001
- AP1000A
- AP-1000
- AP1000
- AP03PZ
- AP03P
- AP03MZ
- AP03M
- AP03LZ
- AP03L
- AP033DL
- AP033DA
- AP033D
- AP0332
- AP033
- AP031
- AP02002
- AP02001
- AP01C
- AP0140
- AP0132
- AP0130
- AP0120
- AP0116
- AOS
- ANS
- ANP
- ANN
- ANM
- ANK
- ANI
- AN1L4Z
- AN1L4M
- AN1L4L
- AN1L3Z
- AN1L3N
- AN1L3M
- AN1F4Z
- AN1F4M
- AN1A4Z
- AN1A4P
- AN1A4M
- AN1A3Q
- AN(S)
AP10数据表相关新闻
AP1117E18L-13 原装正品现货出售
AP1117E18L-13 制造商: Diodes Incorporated 产品种类: 低压差稳压器 RoHS: 详细信息 安装风格: SMD/SMT 封装 / 箱体: SOT-223-3 输出电压: 1.8 V 输出电流: 1 A
2023-2-6AP1117EG-13到货
AP1117EG-13DIODES/美台7000019+SOT-223-3原盘原标 假一罚十优势现货价格最低给钱就卖
2021-9-16AO系列 CD系列到货
AO系列 CD系列到货
2021-7-26AOZ8802ADI原装现货热卖
AOZ8802ADIESD
2021-2-3AOZ8025DI
AOZ8025DI,全新原装现货0755-82732291当天发货或门市自取.
2021-1-12AP1116-0.5A的低压差正可调或固定模式稳压器
特点 •1.3V的满负荷电流最大压差 •快速瞬态响应 •输出电流限制 •内置热关断 •封装：采用SOT89 •良好的噪声抑制 •三端可调或固定1.5V/1.8伏/2.5伏/3.3/5.0V的 应用 •PC周边 •通信 一般描述 AP1116是一种积极的可调或低压差固定模式调节器，最小输出为0.5
2013-2-2
DdatasheetPDF页码索引
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