N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：61.91 Kbytes Page：4 Pages

N-Channel 650 V (D-S) MOSFET

文件：1.0859 Mbytes Page：9 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：107.72 Kbytes Page：4 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：252.12 Kbytes Page：6 Pages

N-Channel 650 V (D-S) MOSFET

文件：1.08592 Mbytes Page：9 Pages

N-Channel 650 V (D-S) MOSFET

文件：1.08593 Mbytes Page：9 Pages

Simple Drive Requirement

文件：105.75 Kbytes Page：4 Pages

N-Channel 650 V (D-S) MOSFET

文件：1.08594 Mbytes Page：9 Pages

Fast Switching Characteristic

文件：72.09 Kbytes Page：4 Pages

FAST IGBT IN NPT TECHNOLOGY

Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution

SIPMO Power Transistor

SIPMOS® Power Transistor • N-Channel • Enhancement mode • Avalanche rated

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0) for target app

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

文件：397.15 Kbytes Page：13 Pages

N CHANNEL ENHANCEMENT MODE

文件：701.78 Kbytes Page：6 Pages