高压MOSFET (500V - 1000V)

600V, aMOS5TM N-Channel Power Transistor

General Description • Proprietary aMOS5TM technology• Low RDS(ON)• Optimized switching parameters for better EMI performance• Enhanced body diode for robustness and fast reverse recovery Applications • SMPS with PFC, Flyback and LLC topologies• Silver ATX,adapter,TV,lighting,Server power

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 8A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.6Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. · Silver ATX,adapter,TV,lighting,Server power

600V, aMOS5TM N-Channel Power Transistor

General Description • Proprietary aMOS5TM technology• Low RDS(ON)• Optimized switching parameters for better EMI performance• Enhanced body diode for robustness and fast reverse recovery Applications • SMPS with PFC, Flyback and LLC topologies• Silver ATX,adapter,TV,lighting,Server power

600V, aMOS5TM N-Channel Power Transistor

General Description • Proprietary aMOS5TM technology• Low RDS(ON)• Optimized switching parameters for better EMI performance• Enhanced body diode for robustness and fast reverse recovery Applications • SMPS with PFC, Flyback and LLC topologies• Silver ATX,adapter,TV,lighting,Server power

Phase leg Trench Field Stop IGBT Power Module

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